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Preparation, Structure, and Optical Properties of Thin ZnAs_2 Films

机译:ZnAs_2薄膜的制备,结构和光学性质

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X-ray amorphous ZnAs_2 films were produced on various transparent substrates by thermal evapo- ration. The composition of the films was found to depend on the source temperature. Stoichiometric films were deposited at source temperatures of 765 ± 20 K. the evaporation and deposition rates calculated in a layerwise vaporization model agree with those found in experiment. The intrinsic edge in the IR transmission spectra of the films is broader and is shifted to longer wavelengths in comparison with bulk ZnAs_2 crystals. The high 300-K transmittance (≥40/100) of the films in the range 1.4-16μm is of practical interest in devising sharp-cutoff IR filters.
机译:通过热蒸发在各种透明基板上生产X射线非晶ZnAs_2膜。发现膜的组成取决于源温度。在源温度为765±20 K的条件下沉积化学计量的薄膜。在分层蒸发模型中计算的蒸发和沉积速率与实验中发现的一致。与块状ZnAs_2晶体相比,薄膜的IR透射光谱的本征边缘更宽,并转移到更长的波长。在设计锐截止IR滤光片时,在1.4-16μm范围内的300-K的高透光率(≥40/ 100)具有实际意义。

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