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首页> 外文期刊>International Journal of Heat and Mass Transfer >A semi-analytical method to study the temperature evolutions of a slab and a semi-infinite target for plasma immersion ion implantation
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A semi-analytical method to study the temperature evolutions of a slab and a semi-infinite target for plasma immersion ion implantation

机译：半解析法研究平板浸没离子注入的平板和半无限靶的温度变化

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摘要

The problems of heating a slab of finite thickness and a semi-infinite target with repetitive high negative bias voltage pulses in contact with a plasma are solved by using the two-dimensional Laplace integral transform technique. The plasma is composed of a collisionless presheath and sheath on an electrically negative biased wall, which partially reflects and secondarily emits ions and electrons. The heating of the workpiece from the plasma accounting for the presheath and sheath is determined by kinetic analysis. This work proposes a semi-analytical model to calculate the temperature evolutions and the melting times of the front surface of a slab and a semi-infinite target, and provides quantitative results applicable to control the temperature evolutions and the melting times. The predicted surface temperature of the slab as a function of time is found to agree well with experimental data. The effects of dimensionless pulse parameters, including the pulse duty cycle and pulse bias voltage, on the melting time and heating rate of the front surface are obtained. The results show that the temperatures and heating rates of the front surface of the slab and target increase with pulse parameters. The melting times to initiate the melting at the front surface are strongly dependent on the pulse parameters. The heat flux transport to workpiece from plasma is important to increase the surface temperature of the workpiece when the bias voltage is switched-off for low pulse duty cycle and low pulse bias voltage. The temperature of the workpiece is underestimated when not accounting for the heating effects during the pulse-off duration for low value of pulse parameters.
机译：通过使用二维拉普拉斯积分变换技术，解决了加热具有有限厚度的平板和具有与等离子体接触的重复性高负偏压脉冲的半无限靶的问题。等离子体由无碰撞的前护套和位于负电偏压壁上的护套组成，该壁部分反射并二次发射离子和电子。通过动力学分析确定来自等离子体的工件的加热，以说明前鞘和鞘。这项工作提出了一个半分析模型，用于计算板坯和一个半无限大靶材的前表面的温度演变和熔化时间，并提供可用于控制温度变化和熔化时间的定量结果。发现板坯的预测表面温度随时间变化与实验数据吻合良好。获得了无量纲脉冲参数（包括脉冲占空比和脉冲偏置电压）对前表面的熔化时间和加热速率的影响。结果表明，板坯和靶材的前表面的温度和加热速率随脉冲参数的增加而增加。在前表面开始熔化的熔化时间很大程度上取决于脉冲参数。当为低脉冲占空比和低脉冲偏置电压而关闭偏置电压时，从等离子体向工件传输的热通量对于提高工件的表面温度很重要。如果不考虑脉冲参数较低的值在脉冲关闭期间产生的热效应，则会低估工件的温度。

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