...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>International Journal of Heat and Mass Transfer >Macrosegregation during alloyed semiconductor crystal growth in strong axial and transverse magnetic fields
【24h】

Macrosegregation during alloyed semiconductor crystal growth in strong axial and transverse magnetic fields

机译：在强轴向和横向磁场中合金化半导体晶体生长过程中的宏观偏析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper presents a model for the unsteady species transport during bulk growth of alloyed semiconductor crystals with both axial and transverse magnetic fields. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport which produce non-uniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal grown in a magnetic field. The present study investigates the effects of magnetic field orientation and strength on the segregation in alloyed semiconductor crystals, and presents results of concentration in the crystal and in the melt at several different times during crystal growth.
机译：本文提出了一个模型，该模型在具有轴向和横向磁场的合金化半导体晶体的整体生长过程中，具有非稳态物种的传输。在合金半导体（例如锗硅（GeSi）和碲化汞镉镉（HgCdTe））的生长过程中，溶质的浓度不小，因此熔体中的密度差异非常大。除了热驱动的浮力对流之外，这些成分变化还驱动成分驱动的浮力对流或溶液对流。这些浮力对流驱动对流传输，从而在熔体和晶体中产生浓度不均匀的现象。该瞬态模型预测了磁场中生长的整个晶体中物质的分布。本研究调查了磁场取向和强度对合金化半导体晶体中偏析的影响，并提出了晶体生长过程中不同时间在晶体和熔体中的集中结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号