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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch
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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

机译：RF小型和大信号表征3D集成GaN / RF-SOI SPST开关

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摘要

This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.
机译：本文介绍了氮化镓（GaN）/ RF-SOI技术中实现的SPST开关的射频（RF）测量，与其GaN /硅（Si）等同物相比。样品采用创新的3D异构集成技术构建。 RF开关晶体管是GaN的，基板是RF-SOI。所获得的插入损耗低于0.4 dB，高达30GHz，而不是比其GaN / Si等效低1 dB。这种差异来自晶体管到基板的垂直电容耦合降低。基于适配于S参数测量的RC网络模型，将该减少估计为59％。在大信号中，通过共面波导传输线表征的基板的线性研究显示了30dB的H2和H3的平均功率水平的降低，其输入功率为38 dB。 SPST的大信号表征显示高达38dBm的压缩，38 dBm的H2和H3抑制水平分别为68和75dBc。

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