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首页> 外文期刊>International journal of numerical modelling >An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics
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An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

机译：由逆转的金字塔沟道层的Algan / GaN Hemt：调查和基础物理学

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC-HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C-HEMT) to be suitable in high-power applications. In the RPC-HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two-dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC-HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC-HEMT improve by the decline in the gate-source capacitance. This article provides kink effects with the output reflection coefficient (S-22) and the short-circuit current gain (h(21)) to show how this anomalous phenomenon affects high-frequency performance of devices. Finally, the proposed method makes the RPC-HEMT appropriate for high-power and high-frequency applications.
机译：本文提出了具有反向金字塔沟道层（RPC-HEMT）的AlGaN / GaN HEMT。纸张的主要目的是常规HEMT（C-HEMT）的击穿电压增加，适用于高功率应用。在RPC-HEMT中，高电场中的反向金字塔沟道层捕获使得导致晶体管断裂的能量载体。步骤将载流子浓度降低，两维电子气体（2deg）通道层，尤其是在栅极接触下。因此，临界电场通过载体质量的均匀分割减小，并改善了RPC-HEMT的击穿电压32％。此外，与传统的晶体管相比，新晶体管的最大输出功率密度提高。另外，诸如RPC-HEMT的截止频率和最大振荡频率的射频（RF）特性通过栅极源电容的下降而改善了RPC-HEMT的变化。本文提供了具有输出反射系数（S-22）和短路电流增益（H（21））的扭结效果，以显示这种异常现象如何影响设备的高频性能。最后，所提出的方法使RPC-HEMT适用于大功率和高频应用。

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