Influence of Base Resistance on Extracting Thermal Resistance for SiGe HBTs

著录项

• 来源
  《International journal of RF and microwave computer-aided engineering》 |2012年第3期|p.353-358|共6页
• 作者

  Bo Han; Tianshu Zhou; Xiangming Xu; Pingliang Li; Jianjun Gao;

  展开▼
• 作者单位

  Department of Communication Engineering, School of Information Science and Technology,East China, Normal University, Shanghai 200241, China;

  Division of Modeling and Testchip, HuaHong NEC Electronics Company, Ltd.,Shanghai 201206, China;

  Division of Modeling and Testchip, HuaHong NEC Electronics Company, Ltd.,Shanghai 201206, China;

  Division of Modeling and Testchip, HuaHong NEC Electronics Company, Ltd.,Shanghai 201206, China;

  Department of Communication Engineering, School of Information Science and Technology,East China, Normal University, Shanghai 200241, China State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, China;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  thermal resistance; heterojunction bipolar transistors; power dissipation; self-heating; temperature sensitivity;

  机译：热阻;异质结双极晶体管;功耗;自热;温度敏感性;