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Accurate Distributed and Semidistributed Models of Field Effect Transistors for Millimeter Wave Applications

机译:毫米波应用的场效应晶体管的精确分布和半分布模型

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摘要

An accurate distributed model of field effect transistors, including the parasitic impedances of the electrodes and the mutual coupling between them for analyzing the propagation effects along the electrodes working at millimeter wave frequencies, is presented. A numerical method is used to calculate the S-parameters of the distributed model. Then, a corresponding simpler semidistributed model, which avoids solving coupled differential equations, is then presented. A GaAs pHEMT example is given to show the well agreement of the S-parameters of the measurement and the distributed model ranging from 1 to 60 GHz. The S-parameters of the semidistributed model agree well with that of the distributed model up to 100 GHz, and both of the models can be applied for S-parameters prediction out of the measurement equipment range.
机译:提出了一种精确的场效应晶体管分布模型,包括电极的寄生阻抗和它们之间的相互耦合,用于分析在毫米波频率下沿电极的传播效应。使用数值方法来计算分布式模型的S参数。然后,提出了一个相应的较简单的半分布模型,该模型避免了求解耦合的微分方程。给出了一个GaAs pHEMT示例,以显示测量的S参数与1至60 GHz范围内的分布式模型的一致性。半分布式模型的S参数与高达100 GHz的分布式模型的S参数非常吻合,并且两个模型都可以用于测量设备范围之外的S参数预测。

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