(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Stephan Maroldt; Ruediger Quay; Philippe Dennler; Dirk Schwantuschke; Markus Musser; Michael Dammann; Rolf Aidam; Patrick Waltereit; Axel Tessmann; Oliver Ambacher

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(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

机译：微波和毫米波频率下的（In）AlGaN异质结场效应晶体管和电路用于大功率应用

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The suitability of the AlGaN/GaN heterostructure for applications up to 20 GHz is demonstrated based on a technically mature process. A broadband power amplifier integrated circuit is designed and fabricated in order to monitor the technology performance. Further, a 100 W power transistor for mobile communications is realized with an efficiency of 70% and an operation frequency of up to 3 GHz. We also demonstrate the performance of a 60 W switch-mode power amplifier module with 75% efficiency for industrial, scientific and medical applications at 2.4 GHz. To push the technology towards higher millimeter-wave frequencies an InAlGaN-based heterostructure was developed. This structure yields high sheet carrier concentration and mobility of 1.9 × 10~(13)cm~(-2) and 1590cm~2 V~(-1) s~(-1), respectively. An excellent f_T of 110GHz and f_(max)of 190GHz were achieved with HFETs with a gate length of 100 nm. This allowed the realization of InAlGaN-based power amplifier monolithic microwave integrated circuits (MMICs) operating at millimeter-wave frequencies of 60 and 94 GHz.

机译：基于技术成熟的工艺，证明了AlGaN / GaN异质结构在高达20 GHz的应用中的适用性。设计并制造了宽带功率放大器集成电路，以监控技术性能。此外，用于移动通信的100 W功率晶体管实现了70％的效率和高达3 GHz的工作频率。我们还演示了60 W开关模式功率放大器模块在2.4 GHz频率下对工业，科学和医疗应用的效率为75％的性能。为了将技术推向更高的毫米波频率，开发了基于InAlGaN的异质结构。这种结构产生高的片状载体浓度，迁移率分别为1.9×10〜（13）cm〜（-2）和1590cm〜2 V〜（-1）s〜（-1）。使用栅极长度为100 nm的HFET，可获得110GHz的出色f_T和190GHz的f_（max）。这允许实现在60和94 GHz毫米波频率下运行的基于InAlGaN的功率放大器单片微波集成电路（MMIC）。

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来源
《Japanese journal of applied physics》 |2013年第8issue2期|08JN13.1-08JN13.6|共6页
作者
Stephan Maroldt; Ruediger Quay; Philippe Dennler; Dirk Schwantuschke; Markus Musser; Michael Dammann; Rolf Aidam; Patrick Waltereit; Axel Tessmann; Oliver Ambacher;
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Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany;

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(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

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