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首页> 外文期刊>精密工学会誌 >Irradiation Effect of N and Ar Ions in the Synthesis of C-N Thin Films by Ion-beam-assisted Deposition Technique
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Irradiation Effect of N and Ar Ions in the Synthesis of C-N Thin Films by Ion-beam-assisted Deposition Technique

机译:离子束辅助沉积技术在合成C-N薄膜中N和Ar离子的辐照效应

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摘要

Simultaneous irradiation of Ar ion is often employed to synthesize C-N films by ion-beam-assisted deposition. To clarify individual roles of N ion(reactive) and Ar ion(inert), films were prepared on Si(001) substrates, such as only C deposited (Carbon film), C evaporated in the atmosphere of 4 x 10~-2 Pa of N_2(Carbon/N), C evaporated under the simultaneous irradiation of Ar ion (Carbon/Ar~+), co-evaporated C and N (C-N), and co-evaporated C and N under the irradiation of Ar ion (C-N/Ar~+).
机译:通常通过离子束辅助沉积同时照射Ar离子来合成C-N膜。为了阐明N离子(反应性)和Ar离子(惰性)的各个作用,在Si(001)衬底上制备了膜,例如仅沉积了C(碳膜),C在4 x 10〜-2 Pa的气氛中蒸发N_2(碳/ N),同时在Ar离子(Carbon / Ar〜+)照射下蒸发的C,共同蒸发的C和N(CN)和在Ar离子(CN)照射下共同蒸发的C和N / Ar〜+)。

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