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首页> 外文期刊>Japanese journal of applied physics >Introduction of an artificial domain wall into BiFeO3 thin film using SrTiO3 bicrystal substrate
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Introduction of an artificial domain wall into BiFeO3 thin film using SrTiO3 bicrystal substrate

机译：使用SrTiO3双晶衬底在BiFeO3薄膜中引入人工畴壁

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摘要

For the future realization of nanoelectronic devices using domain walls (DWs) in ferroelectric thin films as a functional element, the artificial introduction and position control of DWs in BiFeO3 (BFO) thin films using SrTiO3 bicrystal substrates are demonstrated. The BFO thin film follows the bicrystal nature of SrTiO3, and consequently the boundary with an out-of-plane misorientation angle of 8 degrees is formed immediately above that of the substrate. The boundary shows a charged nature induced by a head-to-head polarization configuration. The BFO bicrystal film exhibits a well-saturated polarization hysteresis loop equivalent to those of single-crystalline films. The piezoresponse scanning force microscopy of polarization switching suggests ferroelastic relaxation-mediated 180 degrees switching through 71 degrees switching. Although the boundary corresponds to a low-angle symmetry boundary with misfit dislocations, experimental results show that it behaves just like normal DWs by crystallographic twinning. Therefore, it is concluded that the artificially introduced boundary can be considered as a charged 101 degrees DW. (C) 2015 The Japan Society of Applied Physics
机译：为了将来在铁电薄膜中使用畴壁（DW）作为功能元件实现纳米电子器件，对使用SrTiO3双晶衬底的BiFeO3（BFO）薄膜中DW的人工引入和位置控制进行了演示。 BFO薄膜遵循SrTiO3的双晶性质，因此，在基板的正上方形成了面外取向角为8度的边界。边界显示了由头对头极化配置引起的带电性质。 BFO双晶膜表现出的饱和磁滞回线与单晶膜相当。极化转换的压电响应扫描力显微镜显示，铁弹性松弛介导的180度转换通过71度转换。尽管该边界对应于具有失配位错的低角度对称边界，但实验结果表明，通过晶体孪晶，其行为与普通DW相似。因此，可以得出结论，可以将人工引入的边界视为带电101度DW。 （C）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第10s期|10NA06.1-10NA06.5|共5页
  • 作者

    Fujisawa Hironori; Seto Shota; Nakashima Seiji; Shimizu Masaru;

  • 作者单位

    Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan|Univ Hyogo, Grad Sch Engn, Res Ctr Nanomicro Struct Sci & Engn, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan|Univ Hyogo, Grad Sch Engn, Res Ctr Nanomicro Struct Sci & Engn, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan|Univ Hyogo, Grad Sch Engn, Res Ctr Nanomicro Struct Sci & Engn, Himeji, Hyogo 6712280, Japan;

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