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Electrical characterization of hydrogenated amorphous silicon oxide films

机译：氢化非晶硅氧化膜的电学表征

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摘要

The electrical characterization of hydrogenated amorphous silicon oxide (a-SiOx:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements. In the ESR spectra of the a-SiOx:H films, two ESR peaks with g-values of 2.005 and 2.013 were observed. The ESR peak with the g-value of 2.013 was not observed in the ESR spectra of a-Si:H films. The photoconductivity of the a-SiOx:H films decreased with increasing spin density estimated from the ESR peak with the g-value of 2.005. On the other hand, photoconductivity was independent of spin density estimated from the ESR peak with the g-value of 2.013. The optical absorption coefficient spectra of the a-SiOx:H films were also measured. The spin density estimated from the ESR peak with the g-value of 2.005 increased proportionally with increasing optical absorption owing to the gap-state defect. (C) 2015 The Japan Society of Applied Physics
机译：氢化非晶硅氧化物（a-SiOx：H）膜的电特性通过电子自旋共振（ESR）和电导率测量进行。在a-SiOx：H薄膜的ESR光谱中，观察到两个g值为2.005和2.013的ESR峰。在a-Si：H膜的ESR光谱中未观察到g值为2.013的ESR峰。从ESR峰（其g值为2.005）估计，自旋密度增加，a-SiOx：H薄膜的光电导性降低。另一方面，光电导率与从ESR峰估计的自旋密度无关，其g值为2.013。还测量了a-SiOx：H膜的光吸收系数光谱。由于间隙状态缺陷，从ESR峰（g值为2.005）估计的自旋密度与光吸收的增加成比例地增加。 （C）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第8s1期|08KB11.1-08KB11.5|共5页
  • 作者

    Itoh Takashi; Katayama Ryuichi; Yamakawa Koki; Matsui Kento; Saito Masaru; Sugiyama Shuhichiroh; Sichanugrist Porponth; Nonomura Shuichi; Konagai Makoto;

  • 作者单位

    Gifu Univ, Ctr Innovat Photovolta Syst, Cavendish Lab, Gifu 5011193, Japan.;

    Gifu Univ, Ctr Innovat Photovolta Syst, Cavendish Lab, Gifu 5011193, Japan.;

    Gifu Univ, Ctr Innovat Photovolta Syst, Cavendish Lab, Gifu 5011193, Japan.;

    Gifu Univ, Ctr Innovat Photovolta Syst, Cavendish Lab, Gifu 5011193, Japan.;

    Sharp Co Ltd, Katsuragi, Nara 6392198, Japan.;

    Sharp Co Ltd, Katsuragi, Nara 6392198, Japan.;

    Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan.;

    Gifu Univ, Ctr Innovat Photovolta Syst, Cavendish Lab, Gifu 5011193, Japan.;

    MEXT JST FUTURE PV Innovat Res, Meguro Ku, Tokyo 1528552, Japan.;

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