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首页> 外文期刊>Japanese journal of applied physics >Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN
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Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN

机译：通过在AlGaN上选择性刻蚀Si_xN_y来提高凹栅AlGaN / GaN HFET的工艺均匀性

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摘要

The effects of in-situ Si_xN_y etching were investigated by comparing the uniformity of threshold voltage on recessed gate AlGaN/GaN heterostructure field effect transistor (HFET) devices with in-situ grown Si_xN_y passivation. By varying O_2 ratio in total gas flow, etch rate and selectivity of Si_xN_y and AlGaN were changed significantly. The etch rate of AlGaN was reduced by adding O_2 in gas mixture, which caused the formation of AlO_X and GaO_x on the surface during etching process. The etch rate of in-situ Si_xN_y was decreased with increasing O_2 ratio. By this relationship, the highest selectivity was obtained with 30% O_2 ratio in total gas flow and selectivity was increased from 5:1 to 100 :1. Using this optimized etching condition, the standard deviation of threshold voltage on AlGaN/GaN recess gate HFET was improved from 0.60 to 0.18 on 6-in. processed wafer.
机译：通过比较具有原位生长的Si_xN_y钝化的凹栅AlGaN / GaN异质结构场效应晶体管（HFET）器件上阈值电压的均匀性，研究了原位Si_xN_y蚀刻的效果。通过改变总气体流量中的O_2比率，可以显着改变Si_xN_y和AlGaN的蚀刻速率和选择性。通过在混合气体中加入O_2降低AlGaN的刻蚀速率，从而导致刻蚀过程中在表面形成AlO_X和GaO_x。随着O_2比的增加，原位Si_xN_y的刻蚀速率降低。通过这种关系，在总气体流量中O_2比率为30％时可获得最高的选择性，并且选择性从5：1增加到100：1。使用这种优化的蚀刻条件，在6英寸上，AlGaN / GaN凹栅HFET上阈值电压的标准偏差从0.60改善到0.18。加工晶圆。

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  • 来源
    《Japanese journal of applied physics》 |2014年第4s期|04EF05.1-04EF05.4|共4页
  • 作者

    Hwa-Young Ko; Jinhong Park; Hojung Lee; Youngje Jo; Misun Song; T. Jang;

  • 作者单位

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

    IGBT part, System IC R&D, LG Electronics, Seoul 137-724, Korea;

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