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首页> 外文期刊>Japanese journal of applied physics >Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization
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Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization

机译：氢稀释对氮介导结晶制备ZnO薄膜的影响

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摘要

Hydrogenated ZnO thin films have been successfully deposited on glass substrates via a nitrogen mediated crystallization (NMC) method utilizing RF sputtering. Here we aim to study the crystallinity and electrical properties of hydrogenated NMC-ZnO films in correlation with substrate temperature and H_2 flow rate. XRD measurements reveal that all the deposited films exhibit strongly preferred (001) orientation. The integral breadth of the (002) peak from the hydrogenated NMC-ZnO films is smaller than that of the conventional hydrogenated ZnO films fabricated without nitrogen. Furthermore, the crystallinity and surface morphology of the hydrogenated NMC-ZnO films are improved by increasing substrate temperature to 400 ℃, where the smallest integral breadth of (002) 2θ-ω scans of 0.83° has been obtained. By utilizing the hydrogenated NMC-ZnO films as buffer layers, the crystallinity of ZnO:Al (AZO) films is also improved. The resistivity of AZO films on NMC-ZnO buffer layers decreases with increasing H_2 flow rate during the sputter deposition of buffer layers from 0 to 5 sccm. At a H_2 flow rate of 5 sccm, 20-nm-thick AZO films with low resistivity of 1.5 × 10~(-3) Ω cm have been obtained.
机译：氢化的ZnO薄膜已通过利用RF溅射的氮介导结晶（NMC）方法成功地沉积在玻璃基板上。在这里，我们旨在研究与衬底温度和H_2流量相关的氢化NMC-ZnO薄膜的结晶度和电学性质。 XRD测量表明，所有沉积的膜均表现出强烈优选的（001）取向。来自氢化的NMC-ZnO膜的（002）峰的积分宽度小于没有氮的常规氢化ZnO膜的积分宽度。此外，通过将衬底温度提高至400℃，可以改善氢化NMC-ZnO薄膜的结晶度和表面形貌，其中（002）2θ-ω扫描的最小积分宽度为0.83°。通过将氢化的NMC-ZnO膜用作缓冲层，ZnO：Al（AZO）膜的结晶度也得到了改善。在从0到5 sccm的缓冲层溅射沉积过程中，NMC-ZnO缓冲层上AZO膜的电阻率随着H_2流速的增加而降低。在5sccm的H_2流速下，获得了具有1.5×10〜（-3）Ωcm的低电阻率的20nm厚的AZO膜。

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  • 来源
    《Japanese journal of applied physics》 |2013年第1issue2期|01AC08.1-01AC08.5|共5页
  • 作者

    Iping Suhariadi; Koichi Matsushima; Kazunori Kuwahara; Koichi Oshikawa; Daisuke Yamashita; Hyunwoong Seo; Giichiro Uchida; Kunihiro Kamataki; Kazunori Koga; Masaharu Shiratani; Sven Bornholdt; Holger Kersten; Harm Wulff; Naho Itagaki;

  • 作者单位

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Institute of Experimental and Applied Physics, Christian-Albrechts-University of Kiel, D-24098 Kiel, Germany;

    Institute of Experimental and Applied Physics, Christian-Albrechts-University of Kiel, D-24098 Kiel, Germany;

    Institute of Physics, University of Greifswald, D-17487 Greifswald, Germany;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan,PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan;

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