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首页> 外文期刊>Japanese journal of applied physics >Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating
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Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating

机译：快速激光加热中结晶硅中的少数载流子寿命行为

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We report changes in the light-induced minority carrier effective lifetime T_eff of crystalline silicon caused by rapid laser heating. The top surface of n- and p-type silicon substrates with thicknesses of 520 and 150 urn coated with thermally grown SiO_2 layers were heated by a 940 nm semiconductor laser for 4 ms. R_etf was measured by a method of microwave absorption caused by carriers induced by 620 nm light illumination at 1.5mW/cm~2. T for light illumination of the top surfaces was decreased to 1.0 × 10~(-5) and 4.8 × 10~(-1)sby laser heating at 5.0 × 10~4W/cm~2 forn-and p-type 520-μm-thick silicon substrates, respectively. It was decreased to 1.5 × 10~(-6) and 6.7 × 10~(-6) s by laser heating at 4.2 × 10~4 W/cm~2 for n- and p-type 150-m-thick silicon substrates, respectively. The decrease in τ_(eff) resulted from the generation of defect states associated with the carrier recombination velocity at the top surface region, S_(top). Laser heating increased S_(top) to 6000 and 10000cm/s for n- and p-type 520-m-thick silicon substrates, respectively and to 9200 and 2150cm/s for n- and p-type 150-μm-thick silicon substrates, respectively. Heat treatment at 400℃ for 4h markedly decreased S_(top) to 21 and 120cm/s respectively for 520-μm-thick n- and p-type silicon samples heated at 5.0 × 10~4 W/cm~2. The heat treatment also decreased, 10 and 35cm/s, respectively, for 150-μm-thick n- and p-type silicon substrates heated at 4.2 × 10~4 W/cm~2.
机译：我们报告了由激光快速加热引起的晶体硅的光诱导少数载流子有效寿命T_eff的变化。用940 nm半导体激光器将厚度为520和150 um的n型和p型硅衬底的上表面涂覆热生长的SiO_2层加热4 ms。 R_etf是通过由620nm的1.5mW / cm〜2的光诱导的载流子引起的微波吸收的方法来测量的。激光加热在5.0×10〜4W / cm〜2的条件下，顶面光照射的T值分别降至1.0×10〜（-5）和4.8×10〜（-1）s（forn和p型520-μm）厚的硅基板。对于n型和p型150 m厚的硅基板，通过以4.2×10〜4 W / cm〜2的激光加热，将其降低到1.5×10〜（-6）和6.7×10〜（-6）s。 ， 分别。 τ_（eff）的减小是由于缺陷状态的产生，该缺陷状态与在顶表面区域S_（top）的载流子复合速度有关。激光加热将n型和p型520 m厚度的硅衬底的S_（top）分别提高到6000和10000cm / s，n型和p型150μm硅衬底的S_（top）分别提高到9200和2150cm / s ， 分别。 400℃下热处理4h，将厚度为520μm的n型和p型硅样品加热到5.0×10〜4 W / cm〜2时，S_（top）分别显着降低至21和120cm / s。对于150微米厚的n型和p型硅衬底，其加热速度为4.2×10〜4 W / cm〜2，热处理也分别降低了10和35cm / s。

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  • 来源
    《Japanese journal of applied physics》 |2012年第3issue2期|p.03CA04.1-03CA04.6|共6页
  • 作者

    Toshiyuki Sameshima; Koichi Betsuin; Tomohisa Mizuno; Naoki Sano;

  • 作者单位

    Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

    Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

    Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan;

    Aurea Works Corporation, Yokohama 230-0046, Japan;

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