...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Study of GaSb Layers Grown on Ga/Si(111)-3~(1/2) × 3~(1/2) by Scanning Tunneling Microscopy
【24h】

Study of GaSb Layers Grown on Ga/Si(111)-3~(1/2) × 3~(1/2) by Scanning Tunneling Microscopy

机译：Ga / Si（111）-3〜（1/2）×3〜（1/2）上生长的GaSb层的扫描隧道显微镜研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

GaSb layers grown on a Ga-terminated Si(111) surface have been studied by ultrahigh-vacuum scanning tunneling microscopy. Two types of two-dimensional islands are locally formed on the initial GaSb growth layer on Ga/Si(111)-3~(1/2) × 3~(1/2) at a Ga coverage of about 1.2ML and a Ga/Sb ratio of 4.4. The first type of island is higher than the initial growth layer by a bi-atomic step height. The triangular protrusions on this island correspond to those on the initial GaSb layer. A hexagonal pattern that is higher than the initial growth layer by double the height of the bi-atomic step is observed on the second type of island. Protrusions in the pattern are arrayed at approximately 0.8 nm intervals, which is the distance between twice the unit cell length of Si and GaSb, along the intrinsic direction of the Si(111) surface. Defect lines similar to the misfit dislocation network are observed on the island. These results suggest that the island corresponds to the slightly lattice-relaxed GaSb third layer. A three-dimensional island is formed on the third GaSb layer as GaSb coverage increases. These results indicate that the third GaSb layer is the nucleation site of the three-dimensional GaSb island on Si(111).
机译：通过超高真空扫描隧道显微镜研究了在Ga终止的Si（111）表面上生长的GaSb层。在Ga / Si（111）-3〜（1/2）×3〜（1/2）上的初始GaSb生长层上以约1.2ML的Ga覆盖率和Ga局部形成两种类型的二维岛。 / Sb比为4.4。第一类岛比初始生长层高双原子台阶高度。该岛上的三角形突起对应于初始GaSb层上的三角形突起。在第二类岛上观察到六边形图案，其高度比初始生长层高两倍，是双原子台阶的高度。图案中的突起以大约0.8 nm的间隔排列，该间隔是沿着Si（111）表面的固有方向两倍于Si和GaSb的晶胞长度之间的距离。在岛上观察到类似于错位错位网络的缺陷线。这些结果表明，该岛对应于稍微晶格松弛的GaSb第三层。随着GaSb覆盖率的增加，在第三GaSb层上形成三维岛。这些结果表明，第三GaSb层是Si（111）上三维GaSb岛的形核部位。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第8issue4期|p.08KB01.1-08KB01.4|共4页
  • 作者

    Shinsuke Hara; Ryuto Machida; Kazuki Yagishita; Katsumi Irokawa; Hirofumi Miki; Akira Kawazu; Hiroki I. Fujishiro;

  • 作者单位

    Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Saitama 350-0394, Japan;

    Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号