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首页> 外文期刊>Japanese journal of applied physics >Self-Assembled Monolayers Directly Attached to Silicon Substrates Formed from 1-Hexadecene by Thermal, Ultraviolet, and Visible Light Activation Methods
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Self-Assembled Monolayers Directly Attached to Silicon Substrates Formed from 1-Hexadecene by Thermal, Ultraviolet, and Visible Light Activation Methods

机译：通过热，紫外和可见光激活方法直接连接到自1-十六碳烯形成的硅基板上的自组装单分子膜

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摘要

Using 1-hexadecene as a precursor, self-assembled monolayers (SAMs) were fabricated on hydrogen-terminated silicon (111) [H-Si(111)] surfaces without forming an interfacial oxide layer on the basis of thermal (180℃, 2h), ultraviolet (UV; 500mWcm~(-2), 10h), and visible-light activation (330mWcm~(-2), 16h) processes. As characterized by water contact angle measurements, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and ellipsometry, the hexadecyl SAM fabricated by the visible-light process had a highly-ordered molecular arrangement and a closely-packed methyl-terminated surface similar to the SAMs prepared by the thermal and UV activation processes. The photo-irradiation wavelength dependence of the visible-light activation process was further studied at irradiation wavelengths of 400, 550, and 700 nm. The SAM formation reaction was certainly promoted at all the wavelengths, even at 700 nm. However, oxidation of the Si surface became apparent due to the slow rate in SAM growth, and thus the monolayer coverage of SAM at 700 nm became smaller. The reaction rate became faster with the decreasing wavelength for activation, probably due to the increase in the light adsorption coefficient of Si. The excitation of Si, namely, the generation of hole/electron pairs at the Si substrate, is assumed to be the rate-controlling step of the visible-light activation process.
机译：以1-十六碳烯为前驱体，在氢封端的硅（111）[H-Si（111）]表面上制备了自组装单分子膜（SAMs），而没有基于热（180℃，2h）形成界面氧化物层），紫外线（UV; 500mWcm〜（-2），10h）和可见光激活（330mWcm〜（-2），16h）过程。通过水接触角测量，X射线光电子能谱（XPS），原子力显微镜（AFM）和椭圆光度法表征，通过可见光过程制备的十六烷基SAM具有高度有序的分子排列和密排的甲基末端表面类似于通过热和紫外线活化过程制备的SAM。在400、550和700 nm的照射波长下，进一步研究了可见光激活过程的光照射波长依赖性。当然，即使在700 nm波长下，SAM的形成反应也都得到了促进。然而，由于SAM生长的缓慢速率，Si表面的氧化变得明显，因此SAM在700nm的单层覆盖率变小。随着活化波长的减少，反应速率变得更快，这可能是由于Si的光吸收系数增加了。 Si的激发，即在Si衬底上产生空穴/电子对，被认为是可见光激活过程的速率控制步骤。

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