GaN Selective Area Metal-Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

Tomonari Shioda; Yuki Tomita; Masakazu Sugiyama; Yukihiro Shimogaki; Yoshiaki Nakano

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GaN Selective Area Metal-Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

机译：GaN选择区金属有机气相外延：气相扩散模型对生长速率提高的预测

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摘要

Thickness profiles of GaN grown by selective area metal-organic vapor phase epitaxy (SA-MOVPE) were successfully reproduced by a vapor phase diffusion model that employs only one parameter-effective diffusion length D/k_s. The value of D/k_s of Ga-contain

机译：通过仅使用一个参数有效扩散长度D / k_s的气相扩散模型，成功地再现了通过选择性区域金属-有机气相外延（SA-MOVPE）生长的GaN的厚度分布。含Ga的D / k_s的值

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《Japanese journal of applied physics》 |2007年第44期|1045-1047|共3页
作者
Tomonari Shioda; Yuki Tomita; Masakazu Sugiyama; Yukihiro Shimogaki; Yoshiaki Nakano;
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正文语种 eng
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selective area growth; GaN; metal-organic vapor phase epitaxy; vapor phase diffusion; kinetic model;

机译：选择性区域增长;氮化镓;金属有机气相外延;气相扩散动力学模型;

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机译：考虑表面扩散的InGaN / GaN量子阱选择性区域金属有机气相外延过程中InGaN的生长速率和成分
2. Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal-organic vapor phase epitaxy [J] . T. Shioda, M. Sugiyama, Y. Shimogaki, Journal of Crystal Growth . 2007,第Jan期

机译：InGaAsP选择性区金属有机气相外延的汽相扩散和表面扩散联合模型
3. High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system [J] . Akinori Ubukata, Yoshiki Yano, Hayato Shimamura, Journal of Crystal Growth . 2013,第maya1期

机译：直径为6英寸的Si衬底金属-有机气相外延系统上的高生长速率AlGaN缓冲层和用于AlGaN / GaN HEMT的低碳GaN的大气压生长
4. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy [C] . Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

机译：金属有机气相外延和氢化物气相外延的选择性地区生长和外延横向过度生长
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

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6. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy [O] . Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, -1

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7. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy [O] . B. Beaumont, M. Vaille, G. Nataf, 1998

机译：通过选择性金属有机气相外延，Mg-Enviant of Patched GaN / Sapphire底物上的GaN的横向过度生长
8. Effect of Substrate Orientation on the Growth Rate, Surface Morphology and Silicon Incorporation on GaSb Grown by Metal-Organic Vapor Phase Epitaxy [R] . 2004

机译：衬底取向对金属有机气相外延生长Gasb生长速率，表面形貌和硅掺入的影响

GaN Selective Area Metal-Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

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