Near-Field Photoluminescence Study of InAs/AlGaAs Quantum-Dot-Based Nanoclusters: Band-Filling Effect

Young-Jun Yu; Haneol Noh; Mun-Heon HONG; In-Taek Jeong; Jong-Chun Woo; Yeonsang Park; Heonsu Jeon; Wonho Jhe

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Near-Field Photoluminescence Study of InAs/AlGaAs Quantum-Dot-Based Nanoclusters: Band-Filling Effect

机译：InAs / AlGaAs量子点纳米团簇的近场光致发光研究：带填充效应

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We performed near-field spectroscopy and microscopy of InAs/AlGaAs quantum-dot-based nanoclusters and observed the blueshift (up to 20 meV) of the photoluminescence spectra as the power density is increased. In particular, we observed a gradual change in the dominant luminescence energies of a nanocluster in real space from a lower energy state (1.4150eV) to a higher energy state (1.4392eV) with increasing excitation power, which is indicative of the band-filling effect of semiconductor nanostructures.

机译：我们进行了基于InAs / AlGaAs量子点的纳米团簇的近场光谱和显微镜观察，并观察到随着功率密度的增加，光致发光光谱的蓝移（最高20 meV）。特别是，我们观察到了纳米空间在实际空间中的主要发光能量随着激发功率的增加而从较低的能量状态（1.4150eV）逐渐变为较高的能量状态（1.4392eV）的逐渐变化，这表明带填充半导体纳米结构的影响。

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《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第2a期|p.656-659|共4页
作者
Young-Jun Yu; Haneol Noh; Mun-Heon HONG; In-Taek Jeong; Jong-Chun Woo; Yeonsang Park; Heonsu Jeon; Wonho Jhe;
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作者单位

Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-747, Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
near-field; spectroscopy; microscopy; quantum dots; photoluminescence; band-filling effect; blueshift;

机译：近场;光谱学;显微镜;量子点;光致发光;能带填充效应;蓝移;

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专利

1. Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots [J] . Melliti A, Maaref MA, Sermage B, Physica, E. Low-dimensional systems & nanostructures . 2005,第1期

机译：热发射和能带填充对InGaAs / InAs / GaAs量子点的光致发光上升时间的影响
2. Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure [J] . Dhifallah I, Daoudi M, Bardaoui A, Physica, E. Low-dimensional systems & nanostructures . 2010,第8期

机译：GaAs / AlGaAs结构中引入的InAs超薄层中2DEG限制的光致发光研究
3. Near-field spectroscopy of bimodal size distribution of InAs/AlGaAs single quantum dots [J] . Young-Jun Yu, In-Taek Jeong, Jong-Chun Woo, Applied Physics Letters . 2005,第14期

机译：InAs / AlGaAs单量子点双峰尺寸分布的近场光谱
4. Photoluminescence variation in InAs Quantum dots embedded in InGaAs/AlGaAs Quantum wells at thermal annealing [C] . I. J. Guerrero Moreno, G. Polupan, J. L. Casas Espinola Materials Research Society Symposium on Low-Dimensional Semiconductor Structures . 2013

机译：InaAs / Algaas量子阱在热退火时嵌入INAS量子点的光致发光变化
5. Photoluminescence study of neodymium enriched silicon-nanocluster glass [D] . MacDonald, A. Nicole 2007

机译：富含硅纳米光栅玻璃钕的光致发光研究
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Near-field photoluminescence study of InAs/AlGaAs quantum-dot-based nanoclusters: band filling effect [O] . Yu, Y J, Noh, H E, Hong, M H, 2005

机译：InAs / AlGaAs量子点纳米团簇的近场光致发光研究：能带填充效应
8. In-Plane Magneto-Photoluminescence Studies of Modulation-Doped GaAs/ AlGaAs Coupled Double Quantum Wells;Applied Physics Letters [R] . Kim, Perry, C. H. , Simmons, 2000

机译：调制掺杂Gaas / alGaas耦合双量子阱的面内磁光致发光研究;应用物理快报

Near-Field Photoluminescence Study of InAs/AlGaAs Quantum-Dot-Based Nanoclusters: Band-Filling Effect

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