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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Phase Defect Observation Using Extreme Ultraviolet Microscope
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Phase Defect Observation Using Extreme Ultraviolet Microscope

机译：使用极端紫外显微镜观察相缺陷

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摘要

An aerial image mask inspection system for extreme ultraviolet lithography (EUVL) is developed. This system consists of microscopes using the same wavelength of light as is used for the exposure and produces a magnified image of defects on a mask. Using this microscope, amplitude defects on finished masks and phase defects on glass substrates are observed. A phase defect was formed by a multilayer coated on a line pattern with 5 nm high and 90 nm wide on a glass substrate. Although the defect detected is made beforehand, it is detected by reflection of the light which penetrated the multilayer. These results show that it is possible to detect the internal reflectivity distribution without depending on surface perturbations. We tried to observe "pit defects", but it was not possible to observe these at this time. The pit defects, such as scratches on glass substrates may not become defects depending on the process of formation of the multilayer.
机译：开发了一种用于极紫外光刻（EUVL）的航空图像掩模检查系统。该系统由使用与曝光相同波长的光的显微镜组成，并在掩模上产生缺陷的放大图像。使用该显微镜，可以观察到成品掩模上的振幅缺陷和玻璃基板上的相位缺陷。通过在玻璃基板上以高5nm，宽90nm的线状图案涂布的多层形成相缺陷。尽管检测到的缺陷是预先制造的，但是通过穿透多层的光的反射来检测到。这些结果表明可以在不依赖于表面扰动的情况下检测内部反射率分布。我们试图观察“凹坑缺陷”，但目前无法观察到这些缺陷。取决于多层的形成过程，诸如玻璃基板上的划痕之类的凹坑缺陷可能不会变成缺陷。

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