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Model-Based Optical Proximity Correction for Resist Reflow Process

机译:基于模型的抗蚀剂回流焊光学邻近度校正

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摘要

For the patterning of sub-100nm contact holes, thermal reflow is suggested as a good method of resolving the cost problems of resolution-enhancement technology and the new lithography technology. However, it is difficult to use this process in lithography process because the optical proximity effect of thermal reflow is quite severe. In this study, the optical proximity effects before and after thermal reflow are described. Resist reflow is modeled and simulated for a top-view image. For repeated contacts and random contacts, thermal reflow biases are modeled and compensated for pattern arrays. Simulation results agree well with the experiment results in a small error range according to baking temperature, time, and pitch size. For the optical proximity correction of thermal reflow, two-stage corrections, and model-based optical proximity corrections before and after thermal reflow, are described. The model-based optical proximity correction before thermal reflow can be required using pull-simulated images rather than an aerial image as pattern critical dimension shrinks down to sub-100 nm. The possibility of thermal reflow for the formation of a sub-100nm pattern is shown by simulating a model-based optical proximity correction of a 45 nm contact hole.
机译:对于低于100nm的接触孔的构图,建议使用热回流作为解决分辨率提高技术和新光刻技术的成本问题的好方法。然而,由于热回流的光学邻近效应非常严重,因此难以在光刻工艺中使用该工艺。在这项研究中,描述了热回流前后的光学邻近效应。对顶视图图像的抗蚀剂回流进行建模和仿真。对于重复接触和随机接触,对热回流偏置进行建模并针对图案阵列进行补偿。根据烘烤温度,时间和间距尺寸,模拟结果与实验结果吻合良好,误差范围较小。对于热回流的光学邻近校正,描述了两阶段校正以及热回流之前和之后的基于模型的光学邻近校正。由于图案的关键尺寸缩小到100 nm以下,因此可能需要使用上拉模拟图像而不是航拍图像来进行热回流之前基于模型的光学邻近校正。通过模拟45 nm接触孔的基于模型的光学邻近校正,可以显示形成100nm以下图案的热回流的可能性。

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