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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and Ⅱ-Ⅵ Distributed Bragg Reflectors Combined by Direct Wafer Bonding
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Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and Ⅱ-Ⅵ Distributed Bragg Reflectors Combined by Direct Wafer Bonding

机译：直接晶圆键合结合的氮化物发光二极管和Ⅱ-Ⅵ分布布拉格反射器的微观结构和光学评估

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摘要

We report on the structural and optical characteristics of InGaN/GaN light-emitting diodes (LEDs) and n-type ZnSe-based II-VI distributed Bragg reflectors combined by direct wafer bonding. Reflectivity and transmission electron microscopy (TEM) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Samples were bonded at 270℃ for 60 min or at 650℃ for 5 min. Cross-sectional TEM revealed a uniform wafer-bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens-shaped cavities at semiconductor interfaces.
机译：我们报告了通过直接晶圆键合结合的InGaN / GaN发光二极管（LED）和n型ZnSe基II-VI分布式布拉格反射器的结构和光学特性。进行反射率和透射电子显微镜（TEM）测量。与带有Al盖的对照LED相比，粘合的样品在510 nm波长处具有更高的反射率。将样品在270℃下粘合60分钟或在650℃下粘合5分钟。横截面TEM显示低温样品没有晶片的均匀键合界面，而观察到在较高温度下键合的样品在半导体界面上具有透镜状腔。

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