Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Tang Xi; Li Baikui; Moghadam Hamid Amini; Tanner Philip; Han Jisheng; Li Hui; Dimitrijev Sima; Wang Jiannong

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Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

机译：导通态栅极偏置引起p-GaN栅极AlGaN / GaN功率器件泄漏电流增加的机理

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An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper. Higher OFF-state leakage current was observed with higher gate bias voltage and longer bias duration. We propose that the initial increase in OFF-state leakage current and its subsequent decay with time are due to persistent photoconductivity effects in GaN induced by hole injection and electroluminescence during the ON-state gate bias. At room temperature, it took more than 20 s for the increased leakage current to reduce to its equilibrium level in the dark. The related physical mechanisms underlying this phenomenon in the p-GaN gate HEMT structure are also proposed. (C) 2018 The Japan Society of Applied Physics

机译：观察并报道了由于导通态栅极偏压引起的p-GaN栅极AlGaN / GaN高电子迁移率晶体管（HEMT）的截止态漏电流的增加。在较高的栅极偏置电压和较长的偏置持续时间下，观察到较高的截止状态漏电流。我们提出，截止态漏电流的初始增加及其随时间的衰减是由于导通态栅极偏置期间空穴注入和电致发光在GaN中引起的持久光电导效应所致。在室温下，增加的泄漏电流在黑暗中要花费超过20 s的时间才能减小到平衡水平。还提出了在p-GaN栅极HEMT结构中引起该现象的相关物理机制。（C）2018日本应用物理学会

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来源
《Japanese journal of applied physics》 |2018年第12期|124101.1-124101.4|共4页
作者
Tang Xi; Li Baikui; Moghadam Hamid Amini; Tanner Philip; Han Jisheng; Li Hui; Dimitrijev Sima; Wang Jiannong;
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Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia;

Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China;

Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China;

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机译：增强模式p-GaN栅极AlGaN / GaN高电子迁移率晶体管中的正向偏置栅极击穿机制
2. Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors [J] . Xu Ning, Hao Ronghui, Chen Fu, Applied Physics Letters . 2018,第15期

机译：常关型p-GaN / AlGaN / GaN高电子迁移率晶体管的栅极泄漏机理
3. Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation [J] . Kazuo Hayashi, Yutaro Yamaguchi, Toshiyuki Oishi, Japanese journal of applied physics . 2013,第4Issue2期

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4. ON-State Gate Stress Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs [C] . Arno Stockman, Peter Moens IEEE International Integrated Reliability Workshop . 2020

机译：P-GaN门AlGaN / GaN Hemts中的状态栅极应力诱导阈值稳定性
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

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6. Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs [O] . Wen-Chia Liao, Yan-Lun Chen, Zheng-Xing Chen, 2014

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7. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors [O] . Hasegawa, Hideki, Inagaki, Takanori, Ootomo, Shinya, 2003

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8. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs [R] . 2010

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Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

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