Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100eV) electron beams using beam deceleration technique

Sugie Ryuichi; Uchida Tomoyuki; Fujii Takashi; Araki Tsutomu

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Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100eV) electron beams using beam deceleration technique

机译：使用束减速技术通过极低能量（100eV）电子束从AlGaN / GaN HEMT结构发光

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A low-beam-energy cathodoluminescence (CL) system has been developed. This CL system consists of a scanning electron microscope equipped with a beam deceleration (also known as "retarding") tool and a CL detection system. We employed the system to study an AlGaN/GaN-based high electron mobility transistor structure and observed band-edge emissions even at 100 eV. The band-edge emissions significantly decreased after the plasma irradiation for a few seconds. The low-beam-energy CL is highly sensitive to the surface and can be used for the optimization of the dry process used in the device fabrication. (C) 2018 The Japan Society of Applied Physics

机译：近光能量阴极发光（CL）系统已经开发出来。该CL系统由装有电子束减速（也称为“减速”）工具的扫描电子显微镜和CL检测系统组成。我们使用该系统研究了基于AlGaN / GaN的高电子迁移率晶体管结构，并观察到甚至在100 eV时的带边发射。等离子体辐照几秒钟后，带边发射显着降低。近光能量CL对表面高度敏感，可用于优化器件制造中使用的干法工艺。（C）2018日本应用物理学会

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《Japanese journal of applied physics》 |2019年第1期|010902.1-010902.4|共4页
作者
Sugie Ryuichi; Uchida Tomoyuki; Fujii Takashi; Araki Tsutomu;
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Toray Res Ctr Ltd, 3-3-7 Sonoyama, Otsu, Shiga 5208567, Japan;

Toray Res Ctr Ltd, 3-3-7 Sonoyama, Otsu, Shiga 5208567, Japan;

Ritsumeikan Univ, Dept Elect & Elect Engn, Kusatsu, Shiga 5258577, Japan;

Ritsumeikan Univ, Dept Elect & Elect Engn, Kusatsu, Shiga 5258577, Japan;

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1. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
2. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy [J] . J. Borysiuk, K. Sobczak, A. Wierzbicka, Journal of Crystal Growth . 2014,第sepa1期

机译：等离子体辅助分子束外延生长AlGaN / GaN HEMT结构中的应变的测量
3. Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy [J] . Jose M. Manuel, Francisco M. Morales, Rafael Garcia, Journal of Crystal Growth . 2012,第C期

机译：通过等离子体辅助分子束外延在Si（111）上生长的AlGaN / GaN基HEMT结构中的位错传播
4. Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique [C] . Ghosh Kankat, Das Sudipta, Ganguly S., 2015 Third International Conference on Computer, Communication, Control and Information Technology . 2015

机译：GaN缓冲层厚度对等离子辅助分子束外延技术在Si（111）衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers [O] . Sergi Cuesta, Yoann Curé, Fabrice Donatini, 2021

机译：AlGaN / GaN不对称分级索引独立的限制异性结构，专为电子束泵浦UV激光器而设计
8. Uncooled RF Electronics for Airborne Radar. AlGaN/GaN HEMT Structure Development by MBE [R] . Mishra, U. K. 1999

机译：用于机载雷达的非制冷射频电子设备。 mBE的alGaN / GaN HEmT结构开发

Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100eV) electron beams using beam deceleration technique

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