A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

He Liang; Yang Fan; Yao Yao; Zheng Yue; Zhang Jialin; Li Liuan; He Zhiyuan; Ni Yiqiang; Gu Xin; Liu Yang

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A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

机译：绝缘栅E型GaN晶体管的选择性区域生长凹槽结构的综述

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Recess structure is one of the main schemes for insulated-gate E-mode GaN transistors. In this work, selective area growth (SAG) is proposed to fabricate damage-free recess-gate device, and related progresses regarding process optimization and structure evolution have been reviewed. Firstly, the SAG process has been optimized by interface separation (conduction interface and regrowth interface) and n-type Si impurity removal to achieve high-quality AlGaN/GaN heterostructure. Compared to the traditional etching method, the feasibility and superiority of SAG scheme are demonstrated for realizing E-mode Al2O3/GaN MISFET with small Vth hysteresis. Then, by inserting an in situ AlN interlayer, the SAG Al2O3/AlN/GaN MISFET yields improved frequency dispersion and gate channel conduction performances. To further enhance the channel conduction, the SAG partially recess-gate Al2O3/AlGaN/GaN MIS-HFET structure is proposed, by which both high Vth and high-field-effect channel mobility have been achieved. Those results indicate that SAG method gives a perspective way for insulated-recess-gate GaN transistors fabrication. (c) 2019 The Japan Society of Applied Physics

机译：凹陷结构是绝缘栅E型GaN晶体管的主要方案之一。在这项工作中，提出了选择性区域生长（SAG）来制造无损伤的凹口浇口装置，并且对有关工艺优化和结构演变的相关进展进行了综述。首先，通过界面分离（导电界面和再生界面）和n型Si杂质去除对SAG工艺进行了优化，以实现高质量的AlGaN / GaN异质结构。与传统的刻蚀方法相比，SAG方案具有较小的Vth磁滞，可实现E型Al2O3 / GaN MISFET。然后，通过插入原位AlN中间层，SAG Al2O3 / AlN / GaN MISFET产生了改善的频率色散和栅极沟道导电性能。为了进一步增强沟道导电性，提出了SAG部分凹栅Al 2 O 3 / AlGaN / GaN MIS-HFET结构，通过该结构，既实现了高Vth又实现了高场效应沟道迁移率。这些结果表明，SAG方法为绝缘凹栅GaN晶体管的制造提供了一种透视方法。（c）2019日本应用物理学会

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来源
《Japanese journal of applied physics》 |2020年第sa期|SA0806.1-SA0806.12|共12页
作者
He Liang; Yang Fan; Yao Yao; Zheng Yue; Zhang Jialin; Li Liuan; He Zhiyuan; Ni Yiqiang; Gu Xin; Liu Yang;
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Sun Yat Sen Univ State Key Lab Optoelect Mat & Technol Guangzhou 510275 Guangdong Peoples R China|Sun Yat Sen Univ Sch Mat Sci & Engn Guangzhou 510275 Guangdong Peoples R China;

Sun Yat Sen Univ Sch Elect & Informat Technol Guangzhou 510006 Peoples R China;

Sun Yat Sen Univ State Key Lab Optoelect Mat & Technol Guangzhou 510275 Guangdong Peoples R China|Sun Yat Sen Univ Sch Elect & Informat Technol Guangzhou 510006 Peoples R China;

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1. The Recessed Trapezoidal Groove Dual-Gate AlGaN/ GaN E-Mode Transistor by Using Depletion Enhancement Effect [J] . Ling Yang, Minhan Mi, Bin Hou, Physica status solidi . 2018,第10期

机译：利用耗尽增强效应的嵌入式梯形凹槽双栅AlGaN / GaN E型晶体管
2. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors [J] . Tamotsu Hashizume, Shinya Ootomo, Takanori Inagaki, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第4期

机译：介电膜对GaN和GaN / AlGaN异质结构的表面钝化及其在绝缘栅异质晶体管中的应用
3. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors [J] . Guangyuan Jiang, Yan Liu, Zhaojun Lin, Applied Physics . 2021,第6期

机译：偏振库晶场散射对电子模式P-GaN / AlGan / GaN异质结构场效应晶体管的寄生源性电阻
4. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate [C] . Tian-Li Wu, Marcon Denis, De Jaeger Brice, Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs . 2015

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

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6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate [O] . Wu Tian-Li, Marcon Denis, De Jaeger Brice, 2015

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响

A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

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