Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor

Takeuchi Wakana; Kutsuki Katsuhiro; Kagoshima Eiji; Onishi Toru; Iwasaki Shinya; Sakashita Mitsuo; Fujiwara Hirokazu; Nakatsuka Osamu

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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor

机译：4H-SiC（0001）横向金属 - 氧化物半导体场效应晶体管的机械单轴应力通过机械单轴应力提高

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We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions [11 (2) over bar0] and [1 (1) over bar 00] was investigated on the bend directions [11 (2) over bar0] and [1 (1) over bar 00] with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced tress. (C) 2020 The Japan Society of Applied Physics

机译：我们研究了机械单轴应变对4H-SiC（0001）上的横向N沟道金属氧化物半导体场效应晶体管（MOSFET）的反转通道迁移率的影响。我们使用定制设计的弯曲支架在MOSFET制造后对芯片施加拉伸和压缩应力。在弯曲方向上研究了与两个不同的沟道方向[11（2）上方的条形图0]和[1（1）上的[1（1））和[1（1））的行为[11（2）上方的条形图]和[1（1）用拉伸和压缩应力。我们发现，随着垂直构造的单轴压缩应力有效地增加了反转通道移动性，这是垂直于弯曲方向的漏极电流的漏极电流。从迁移率的温度依赖性，我们推导出迁移率的增强归因于引入的Tress的4H-SiC中有效质量的减少。（c）2020日本应用物理学会

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《Japanese journal of applied physics》 |2020年第sg期|SGGD08.1-SGGD08.7|共7页
作者
Takeuchi Wakana; Kutsuki Katsuhiro; Kagoshima Eiji; Onishi Toru; Iwasaki Shinya; Sakashita Mitsuo; Fujiwara Hirokazu; Nakatsuka Osamu;
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Aichi Inst Tech Dept Elect & Elect Engn 1247 Yachigusa Yakusa Cho Toyota Aichi 4700392 Japan|Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan;

Toyota Cent Res & Dev Labs Inc 41-1 Yokomichi Nagakute Aichi 4801192 Japan;

OYOTA MOTOR CORP 543 Kirigahora Nishihirose Cho Toyota Aichi 4700309 Japan;

OYOTA MOTOR CORP 543 Kirigahora Nishihirose Cho Toyota Aichi 4700309 Japan;

OYOTA MOTOR CORP 543 Kirigahora Nishihirose Cho Toyota Aichi 4700309 Japan;

Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan|OYOTA MOTOR CORP 543 Kirigahora Nishihirose Cho Toyota Aichi 4700309 Japan;

Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan|Nagoya Univ Inst Mat & Syst Sustainabil Chikusa Ku Furo Cho Nagoya Aichi 4648601 Japan;

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1. Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors [J] . Fiorenza Patrick, Giannazzo Filippo, Frazzetto Alessia, Journal of Applied Physics . 2012,第8期

机译：表面形态对横向注入4H-SiC（0001）金属氧化物半导体场效应晶体管的沟道迁移率的影响
2. Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors [J] . Patrick Fiorenza, Filippa Giannazzo, Alessia Frazzetto, Journal of Applied Physics . 2012,第8期

机译：表面形态对横向注入4H-SiC（0001）金属氧化物半导体场效应晶体管的沟道迁移率的影响
3. Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation [J] . Yung-Yu Chen, Chin-Ren Hsieh, Fang-Yu Chiu Microelectronics reliability . 2012,第6期

机译：沟道氟注入增强SiN单轴应变n沟道金属氧化物半导体场效应晶体管的抗应力能力
4. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (0001) [C] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Silicon Carbide and Related Materials 2007 . 2009

机译：栅极湿法再氧化对在4H-SiC上制造的金属氧化物半导体场效应晶体管的可靠性和沟道迁移率的影响（0001）
5. Strain effects on hole mobility of silicon and germanium p-type metal-oxide-semiconductor field-effect-transistors [D] . Sun, Guangyu 2007

机译：应变对硅和锗p型金属氧化物半导体场效应晶体管的空穴迁移率的影响
6. High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen [O] . E. Pallecchi, F. Lafont, V. Cavaliere, -1

机译：氢气下生长后退火在4H-SiC（0001）上外延石墨烯中的高电子迁移率
7. Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer [O] . Han Younggun, Koganemaru Masaaki, Ikeda Toru, 2010

机译：单轴机械应力对（100）硅片上金属氧化物半导体场效应晶体管高频性能的影响

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor

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