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首页> 外文期刊>Journal of Applied Physics >Enhancement of carrier lifetimes in type-Ⅱ quantum dot/quantum well hybrid structures
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Enhancement of carrier lifetimes in type-Ⅱ quantum dot/quantum well hybrid structures

机译：Ⅱ型量子点/量子阱混合结构中载流子寿命的提高

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摘要

We investigate optical transitions and carrier dynamics in hybrid structures containing type-Ⅰ GaAs/AlGaAs quantum wells (QWs) and type-Ⅱ GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photolumines-cence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-Ⅱ semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.
机译：我们研究了包含Ⅰ型GaAs / AlGaAs量子阱（QWs）和Ⅱ型GaSb / AlGaAs量子点（QDs）的混合结构的光学跃迁和载流子动力学。我们表明，可以根据QW / QD空间分隔修改在QWs中约束的光生电子与QDs和润湿层中的孔的光学复合。特别地，对于低间隔物厚度，由于空穴从QW转移到GaSb层，可以抑制QW的光发射，有利于空间分离的载流子的光学复合，这对于光学存储器和太阳能电池应用很有用。时间分辨的光致发光（PL）测量揭示了非指数重组动力学。我们证明，只能通过考虑Ⅱ型半导体纳米结构双分子复合近似中载流子密度的线性和二次项来定量描述PL瞬变。根据隔离层的厚度，我们提取了QD的700 ns至5μs的激子寿命。

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  • 来源
    《Journal of Applied Physics》 |2016年第8期|084305.1-084305.7|共7页
  • 作者

    O. D. D. Couto Jr.; P. T. de Almeida; G. E. dos Santos; M. A. G. Balanta; H. F. Andriolo; J. A. Brum; M. J. S. P. Brasil; F. Iikawa; B. L. Liang; D. L. Huffaker;

  • 作者单位

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    Instituto de Fisica 'Gleb Wataghin,' Universidade Estadual de Campinas, 13083-859 Campinas, Sao Paulo, Brazil;

    California NanoSystems Institute, UCLA, Los Angeles, California 90095, USA;

    California NanoSystems Institute, UCLA, Los Angeles, California 90095, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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