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Microstructure, optical property, and electronic band structure of cuprous oxide thin films

机译：氧化亚铜薄膜的微观结构，光学性质和电子能带结构

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摘要

Cuprous oxide (Cu_2O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu_2O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu_2O thin films.
机译：通过射频溅射沉积在各种温度下生长氧化亚铜（Cu_2O）薄膜。分别用椭圆偏振光谱法和光致发光法测量了Cu_2O薄膜的介电功能和发光性能。在光致发光光谱中观察到高能峰。使用介电函数的二阶导数谱和标准临界点模型发现了几个临界点（CP）。利用密度泛函理论计算了电子能带结构和介电函数，并估算了CP能量与实验数据进行了比较。我们确定了高能发光峰到准直接跃迁，这是由Cu_2O薄膜的颗粒结构引起的。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.103503.1-103503.8|共8页
  • 作者

    Jun-Woo Park; Hyungkeun Jang; Sung Kim; Suk-Ho Choi; Hosun Lee; Joongoo Kang; Su-Huai Wei;

  • 作者单位

    Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea;

    Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea;

    Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea;

    Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea;

    Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea;

    National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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