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Characterization of phase change memory materials using phase change bridge devices

机译：使用相变电桥器件表征相变存储材料

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摘要

Having become one of the most promising candidates for future nonvolatile memory applications, phase change random access memory is now driving an intensive search for phase change materials with optimized properties. In this paper, phase change bridge devices are utilized as a unique material test vehicle, allowing systematic extraction of crucial material parameters such as resistance contrast, switching speed, threshold voltage, and set and reset power. Bridge devices fabricated from undoped Ge_(15)Sb_(85) are presented that reproducibly switch between set and reset states with one decade resistance contrast using current pulses as short as 10 ns. Since devices are fabricated in the amorphous-as-deposited phase, an interesting intermediate device state can be produced, which we attribute to a crystalline center region that fails to completely bridge the amorphous active device volume. The subtle differences between the amorphous-as-melt-quenched and amorphous-as-deposited phases are explored using both bridge devices and optical experiments. It is shown that the large difference in crystallization times between these two amorphous states observed in laser experiments is reflected also in device operation.
机译：相变随机存取存储器已经成为未来非易失性存储器应用的最有希望的候选者之一，现在正在推动对具有优化特性的相变材料的深入研究。在本文中，相变电桥器件用作独特的材料测试工具，可以系统地提取关键材料参数，例如电阻对比，开关速度，阈值电压以及设置和复位功率。提出了由未掺杂的Ge_（15）Sb_（85）制成的电桥器件，该器件可使用短至10 ns的电流脉冲，以十倍的电阻对比度可再现地在设置状态和复位状态之间切换。由于器件是在非晶态沉积阶段制造的，因此可以产生令人感兴趣的中间器件状态，这归因于无法完全桥接非晶态有源器件体积的晶体中心区域。使用电桥装置和光学实验，探索了非晶态淬火淬火相和非晶态沉积相之间的细微差异。结果表明，在激光实验中观察到的这两种非晶态之间结晶时间的巨大差异也反映在器件的操作中。

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  • 来源
    《Journal of Applied Physics》 |2009年第5期|054308.1-054308.7|共7页
  • 作者

    Daniel Krebs; Simone Raoux; Charles T. Rettner; Geoffrey W. Burr; Robert M. Shelby; Martin Salinga; C. Michael Jefferson; Matthias Wuttig;

  • 作者单位

    Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;

    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;

    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;

    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;

    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;

    Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;

    IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;

    Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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