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首页> 外文期刊>Journal of Applied Physics >Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation
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Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

机译：使用X射线光电子能谱和正电子an没研究了通过金属栅沉积将缺陷引入HfO_2栅介质中

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摘要

The impact of TiN deposition on thin HfO_2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO_2/Si interface under the influence of the electric field, suggesting the presence of negative charges in HfO_2. After TiN was deposited by chemical vapor deposition, no large change in the defect species was observed. After TiN was deposited by physical vapor deposition, however, positive charges were introduced at the TiN/HfO_2 interface, which were associated with the incorporation of nitride into HfO_2 and/or the plasma damage at the surface of HfO_2, and the resultant formation of positively charged oxygen vacancies.
机译：利用X射线光电子能谱和单能正电子束研究了TiN沉积对Si衬底上形成的HfO_2薄膜的影响。对于预沉积样品，发现注入到Si中的正电子在电场的影响下向HfO_2 / Si界面扩散，表明HfO_2中存在负电荷。在通过化学气相沉积法沉积TiN之后，未观察到缺陷物种的大变化。但是，在通过物理气相沉积法沉积TiN之后，在TiN / HfO_2界面处引入了正电荷，这与氮化物掺入HfO_2和/或HfO_2表面的等离子体损坏以及所形成的正电荷有关。带电的氧空位。

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