A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas

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A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas

机译：等离子体蚀刻过程的动力学研究。 I.在CnFm / H2和CnFm / O2等离子体中蚀刻Si和SiO2的模型

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A kinetic model of the plasma‐etching process has been developed to describe the etching of Si and SiO2 in CnFm/O2 and CnFm/H2 plasmas (CnFm ≡CF4, C2F6). The model has obtained good agreement with experiment for demonstrating the selective etching of SiO2 in CnFm/H2 plasmas, and the enhancement of the etch rate of Si in CnFm/O2 plasmas. Good agreement is also obtained with mass spectroscopic measurements of neutral species from a CF4/H2 plasma. Results from the model indicate that the adsorption of atomic hydrogen on silicon surfaces from CnFm/H2 plasmas, which then reacts with adsorbed fluorine, can significantly effect the selectivity of etching SiO2 with respect to Si. Similarly, the adsorption of atomic oxygen, which then reacts with adsorbed carbon thereby cleansing the surface, may be responsible for the large etch rates of Si seen in CnFm/O2 plasmas. The selectivity of etching SiO2 in CnFm/H2 plasmas has been found to be a sensitive function of the C/F ratio of the carbon‐bearing molecules which desorb from the surface, and a C/F ratio of 0.5 shows best agreement with experiment. Results from the model favor ion drift as a dominant mechanism by which radicals are transported to the surface.

机译：建立了等离子体刻蚀过程的动力学模型，以描述在CnFm / O2和CnFm / H2等离子体（CnFmmCF4，C2F6）中Si和SiO2的刻蚀。该模型与实验证明了在CnFm / H2等离子体中SiO2的选择性刻蚀以及提高CnFm / O2等离子体中Si的刻蚀速率，与实验相吻合。质谱测量来自CF4 / H2等离子体的中性物质也获得了很好的一致性。该模型的结果表明，CnFm / H2等离子体在硅表面吸附原子氢，然后与吸附的氟发生反应，可以显着影响相对于Si蚀刻SiO2的选择性。类似地，原子氧的吸附然后与吸附的碳反应，从而清洁表面，可能是导致CnFm / O2等离子体中的Si蚀刻速率高的原因。已发现在CnFm / H2等离子体中蚀刻SiO2的选择性是对从表面脱附的含碳分子的C / F比的敏感函数，而C / F比为0.5与实验最吻合。该模型的结果倾向于将离子漂移作为将自由基传输到表面的主要机制。

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《Journal of Applied Physics》 |1982年第4期|P.2923-2938|共16页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. A kinetic study of the plasma‐etching process. II. Probe measurements of electron properties in an rf plasma‐etching reactor [J] . Journal of Applied Physics . 1982,第4期

机译：等离子体蚀刻过程的动力学研究。二。射频等离子体蚀刻反应器中电子性质的探针测量
2. Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N-2/Ar inductively coupled plasma: Effect of CF4/CH2F2 mixing ratio [J] . Lee Jongchan, Efremov Alexander, Kim Kwangsoo, Japanese journal of applied physics . 2016,第10期

机译：CF4 / CH2F2 / N-2 / Ar电感耦合等离子体中SiC，SiO2和Si的刻蚀特性：CF4 / CH2F2混合比的影响
3. Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy [J] . Gaboriau F, Cartry G, Peignon MC, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2006,第9期

机译：碳氟化合物ICP等离子体中Si和SiO2的蚀刻机理：通过质谱，朗缪尔探针和光发射光谱法分析等离子体
4. Investigation of inductively coupled SF6 plasma etching of Si and SiO2 throught a global model coupled with langmuir adsorption kinetics [C] . David A. Toneli, Rodrigo S. Pessoa, Marisa Roberto IEEE International Conference on Plasma Sciences . 2016

机译：通过整体模型与朗缪尔吸附动力学耦合研究硅和二氧化硅的感应耦合SF6等离子体蚀刻
5. Self-consistent surface kinetics models for plasma etching and deposition processes. [D] . Abdollahi-Alibeik, Shahram. 2001

机译：用于等离子体蚀刻和沉积过程的自洽表面动力学模型。
6. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma [O] . Masatoshi Kawakami, Dominik Metzler, Chen Li, -1

机译：腔室壁对使用循环Ar / C4F8等离子体的氟碳辅助的SiO2原子层蚀刻的影响
7. Selective SiN/SiO2 etching by SF6/H2/Ar/He plasma [O] . P. Pankratiev, Yu. Barsukov, A. Vinogradov, 2019

机译：SF6 / H2 / AR / HE等离子体的选择性SIN / SIO2蚀刻

A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas

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