Liquid phase epitaxial growth of (Al,Ga)As double‐heterostructure laser material in a sapphire boat

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Liquid phase epitaxial growth of (Al,Ga)As double‐heterostructure laser material in a sapphire boat

机译：蓝宝石舟中（Al，Ga）As双异质结构激光材料的液相外延生长

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It is demonstrated that the use of a sapphire boat in the liquid phase epitaxial (LPE) growth of (Al,Ga)As double heterostructure (DH) laser material results in better layer‐thickness uniformity and no edge growth. We attribute this improvement to control of thermal geometry within the melt. In addition, the wetting of Ga on sapphire results in laser material which has less prominent meniscus lines and is free of rake lines. The distribution of cw threshold currents represents a substantial improvement for LPE grown (Al,Ga)As and is comparable to that reported for MBE (Al,Ga)As DH lasers.

机译：已证明在（Al，Ga）As双异质结构（DH）激光材料的液相外延（LPE）生长中使用蓝宝石晶舟会产生更好的层厚均匀性并且没有边缘生长。我们将此改进归因于熔体内部热几何形状的控制。另外，Ga在蓝宝石上的润湿导致激光材料的弯月面线不那么突出并且没有前角线。 cw阈值电流的分布代表了LPE生长的（Al，Ga）As的显着改善，并且与MBE（Al，Ga）As DH激光器报道的相当。

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《Journal of Applied Physics》 |1982年第12期|P.9217-9219|共3页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Channelled‐substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth [J] . Journal of Applied Physics . 1984,第3期

机译：具有气相外延基础结构和液相外延再生的沟道衬底掩埋异质结构InGaAsP / InP激光器
2. Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers [J] . Journal of Applied Physics . 1983,第2期

机译：增强的磷化铟衬底保护层，用于铟镓镓砷化物磷化双异质结构激光器的液相外延生长
3. Features of Defect Formation During the Growth of Double Heterostructures for Injection Lasers Based on Al_xGa_(1-x)As_ySb_(1 - y)/GaSb Materials [J] . G. F. Kuznetsov Semiconductors . 2013,第8期

机译：Al_xGa_（1-x）As_ySb_（1-y）/ GaSb材料在双异质结构生长过程中缺陷形成的特征
4. (Al, Ga)As, GaAs double heterostructure lasers prepared by new liquid phase epitaxial growth technique [C] . Horikoshi Y. Electron Devices Meeting, 1976 International . -1

机译：新型液相外延生长技术制备的（Al，Ga）As，GaAs双异质结构激光器
5. Growth of wurtzite gallium nitride epitaxial films on sapphire substrate by reactive molecular beam epitaxy and material characterization. [D] . Kim, Wook. 1998

机译：通过反应分子束外延和材料表征，在蓝宝石衬底上生长纤锌矿型氮化镓外延膜。
6. Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template [O] . Zhaoyang Lin, Anxiang Yin, Jun Mao, 2016

机译：二维晶体软模板上对称不匹配异质结构的可扩展溶液相外延生长
7. Liquid-phase epitaxial growth of AlGaAsP with application to InGaP/AlGaAsP single heterostructure diodes [O] . WU MC 2012

机译：AlGaAsP的液相外延生长及其在InGaP / AlGaAsP单异质结构二极管中的应用
8. N-AlGaSb and GaSb/AlGaSb Double-Heterostructure Lasers Grown by OrganometallicVapor Phase Epitaxy [R] . Wang, C. A., Jensen, K. F., Jones, A. C., 1995

机译：有机金属气相外延生长的N-alGasb和Gasb / alGasb双异质结构激光器

Liquid phase epitaxial growth of (Al,Ga)As double‐heterostructure laser material in a sapphire boat

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