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首页> 外文期刊>Journal of Crystal Growth >Structure of thin polycrystalline silicon films on ceramic substrates
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Structure of thin polycrystalline silicon films on ceramic substrates

机译：陶瓷基板上的多晶硅薄膜的结构

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摘要

The structure of polycrystalline silicon films with thickness of 10 μm, which were deposited by thermal chemical vapor deposition on ceramic substrates, was investigated. In this article we report reslts of silicon films deposited on SiAlON, mullite, and alumina substrates. The type of substrate strongly influences the stress and the texture of the Films. In the silicon films deposited on SiAlON substrate tensile stress is observed, while in the films deposited on mullite And alumina substrates compressive stress is present. In all deposited films the observed stress is higher than the thermal Stress, which has been determined from the differences in the thermal expansion coefficients of the film and substrate Materials.
机译：研究了通过热化学气相沉积法在陶瓷基板上沉积的厚度为10μm的多晶硅膜的结构。在本文中，我们报告了沉积在SiAlON，莫来石和氧化铝衬底上的硅膜的溶解。基材的类型会严重影响薄膜的应力和质感。在SiAlON衬底上沉积的硅膜中观察到拉应力，而在莫来石和氧化铝衬底上沉积的膜中存在压应力。在所有沉积的薄膜中，观察到的应力都高于热应力，该应力是由薄膜和基材材料的热膨胀系数的差异确定的。

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