Growth of CdWO_4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|156-159|共4页
• 作者

  E.N. Galashov; V.V. Atuchin; A.S. Kozhukhov; L.D. Pokrovsky; V.N. Shlegel;

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• 作者单位

  Department of of Applied Physics, Novosibirsk State University, Novosibirsk 630090, Russia;

  Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia,Tomsk State University, Tomsk 634050, Russia;

  Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;

  Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;

  Laboratory of Crystal Growth, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Atomic force microscopy; A1. Surface structure; A2. Czochralski method; B1. Cadmium compounds; B1. Tungstates;

  机译：A1。原子力显微镜;A1。表面结构;A2。直拉法;B1。镉化合物;B1。钨酸盐;