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Growth of Al doped Ca_3TaGa_3Si_2O_(14) piezoelectric single crystals with various Al concentrations

机译:不同Al浓度的Al掺杂Ca_3TaGa_3Si_2O_(14)压电单晶的生长

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摘要

Al-doped Ca_3TaGa_3Si_2O_(14) single crystals with various Al concentrations were grown by the micro-pulling-down method and their structure and chemical composition were investigated. Ca_3Ta (Ga_(1-x)Al_x)_3Si_2O_(14) crystals with x=0, 0.2, 0.4, 0.6, 0.8 and 1 were grown. They were highly transparent and a single phase of langasite-type structure was confirmed in the powder X-ray diffraction measurement. Their lattice parameters related to the α- and c-axes systematically decreased with increase in Al concentration. It followed from the EPMA analysis that the real Al concentration in the crystals almost corresponded to the nominal compositions.
机译:采用微拉法生长了不同浓度的Al掺杂Ca_3TaGa_3Si_2O_(14)单晶,并对其结构和化学组成进行了研究。生长具有x = 0、0.2、0.4、0.6、0.8和1的Ca_3Ta(Ga_(1-x)Al_x)_3Si_2O_(14)晶体。它们是高度透明的,并且在粉末X射线衍射测量中证实了单相的兰加石型结构。随着Al浓度的增加,与α轴和c轴相关的晶格参数会系统地降低。根据EPMA分析,晶体中的实际Al浓度几乎对应于标称成分。

著录项

  • 来源
    《Journal of Crystal Growth》 |2014年第1期|173-176|共4页
  • 作者单位

    Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan;

    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;

    TDK Corporation, Kisakata 018-0147, Japan;

    TDK Corporation, Kisakata 018-0147, Japan;

    TDK Corporation, Kisakata 018-0147, Japan;

    Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan,New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;

    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan,C&A Corporation, Sendai 980-8579, Japan;

    Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan,New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan,C&A Corporation, Sendai 980-8579, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. X-ray diffraction; A2. Growth from melt; B1. Langasite; B1. Oxides; B2. Piezoelectric materials;

    机译:A1。 X射线衍射;A2。从熔体中生长;B1。菱铁矿;B1。氧化物;B2。压电材料;

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