机译:不同Al浓度的Al掺杂Ca_3TaGa_3Si_2O_(14)压电单晶的生长
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan;
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;
TDK Corporation, Kisakata 018-0147, Japan;
TDK Corporation, Kisakata 018-0147, Japan;
TDK Corporation, Kisakata 018-0147, Japan;
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan,New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan,C&A Corporation, Sendai 980-8579, Japan;
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan,New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan,C&A Corporation, Sendai 980-8579, Japan;
A1. X-ray diffraction; A2. Growth from melt; B1. Langasite; B1. Oxides; B2. Piezoelectric materials;
机译:Ca_3TaGa_3Si_2O_(14)单晶的晶体生长以及介电,压电和弹性性质
机译:高级压电晶体Ca_3TaGa_3Si_2O_(14):生长,晶体结构完善和声学特性
机译:Ca 3 sub> Nb(Ga 1-x sub> Al x sub>) 3 sub> Si 2 b>的晶体生长不同Al浓度的sub> O 14 sub>压电单晶
机译:先进的压电晶体CA_3TAGA_3SI_2O_(14):生长,晶体结构完美,压电和声学性质
机译:基于CA3TAGA3SI2O14和YCA 40(BO3)3单晶的高温压电散装声波传感器
机译:不同Al浓度的Ca3Nb(Ga1-xAlx)3Si2O14压电单晶的晶体生长
机译:不同al浓度的Ca3Nb(Ga1-xalx)3si2O14压电单晶的晶体生长
机译:用固态单晶生长(ssCG)技术开发n型和p型掺杂钙钛矿单晶。