Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

Masamitu. Takahasi

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Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

机译：使用X射线衍射定量监测InAs量子点的生长

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摘要

Synchrotron X-ray diffraction has been applied to the in situ monitoring of the molecular beam epitaxial growth of self-assembled InAs/GaAs(001) quantum dots (QDs). As well as the strain distribution inside QDs, the lateral and vertical size of QDs was determined as a function of growth time. In combination with post-growth atomic force microscopy, the evolution of the total volume of QDs was evaluated. It was found that the QD volume increases at a similar rate over the temperature range of 450-480℃ A significant mass transport from the wetting layer and the substrate was confirmed.

机译：同步辐射X射线衍射已应用于自组装InAs / GaAs（001）量子点（QDs）分子束外延生长的原位监测。除了量子点内部的应变分布外，量子点的横向和垂直尺寸还取决于生长时间。结合生长后原子力显微镜，评估了量子点总体积的演变。发现在450-480℃的温度范围内，量子点体积以相似的速率增加。证实了从润湿层和基体的大量传质。

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来源
《Journal of Crystal Growth》 |2014年第1期|372-375|共4页
作者
Masamitu. Takahasi;
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作者单位

Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-cho, Hyogo 679-5148, Japan,University of Hyogo, Kamigori-cho, Hyogo 678-1297, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。 X射线衍射;A3。分子束外延;B2。半导体Ⅲ-Ⅴ材料;

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专利

1. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction [J] . Kenichi Shimomura, Hidetoshi Suzuki, Takuo Sasaki, Journal of Applied Physics . 2015,第18期

机译：使用原位X射线衍射直接观察InAs量子点和盖层在分子束外延生长过程中的应变
2. Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-lrradiated Growth Interruption [J] . Naoki Kakuda, Toshiyuki Kaizu, Masamitu Takahasi, Japanese journal of applied physics . 2010,第9ISSUE1期

机译：Sb / GaAs层上高密度InAs量子点的时间分辨X射线衍射测量以及Sb辐照生长中断对聚结的抑制
3. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [J] . Raul O. Freitas Alain A. Quivy and Sérgio L. Morelhão Journal of Applied Physics . 2009,第3期

机译：X射线布拉格表面衍射研究InAs / GaAs量子点的生长和封端
4. Temperature Dependent Characterization of Imbedded InAs Quantum Dots in GaAs Superlattice Solar Cell Structures by High Resolution X-ray Diffraction [C] . Josephine J. Sheng, David. C. Chapman, David M. Wilt, . 2012

机译：GaAs超晶格太阳能电池结构中嵌入InAs量子点的高分辨率X射线衍射随温度变化的特征
5. Epitaxial Growth of High Quality InAs/GaAsSb Quantum Dots for Solar Cells. [D] . Kim, Yeongho. 2015

机译：用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
6. Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements [O] . Manjula Sharma, Milan K. Sanyal, Ian Farrer, -1

机译：从掠入射X射线衍射测量中提取的InAs量子点的密度依赖性成分
7. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [O] . Freitas Raul de Oliveira, Quivy Alain Andre, Morelhao Sergio Luiz 2009

机译：X射线布拉格表面衍射研究InAs / GaAs量子点的生长和封端

Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

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