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首页> 外文期刊>Journal of Crystal Growth >Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell
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Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell

机译：GaAs p-i-n单结太阳能电池中InGaAs / GaAsP超晶格中不同磷含量的应变效应

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摘要

The GaAs p-i-n single junction solar cell with InGaAs/GaAsP super-lattice (SL) in the i-region was fabricated by metal organic vapor phase epitaxy (MOVPE). Using the in situ wafer curvature monitoring, a series of SL solar cell samples with different phosphorus composition in the barrier GaAsP layer was evaluated the accumulated strain during MOVPE growth. The sample with larger phosphorus content in GaAsP barrier layer reduced total strain accumulation, resulted in improved solar cell performance regardless to the higher potential barrier. This result indicated the about 3-nm thick barrier is sufficiently thin for carrier extraction by assisting the tunneling effect. Furthermore, the accumulated strain during MOVPE growth of SL deteriorate solar cell.
机译：通过金属有机气相外延（MOVPE）制得了i区具有InGaAs / GaAsP超晶格（SL）的GaAs p-i-n单结太阳能电池。使用原位晶片曲率监测，对势垒GaAsP层中磷成分不同的一系列SL太阳能电池样品进行了MOVPE生长期间的累积应变评估。 GaAsP势垒层中磷含量较高的样品减少了总应变积累，无论更高的势垒如何，都可以提高太阳能电池的性能。该结果表明约3nm厚的势垒足够薄以通过辅助隧穿效应而用于载流子提取。此外，SL的MOVPE生长期间的累积应变使太阳能电池劣化。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|712-716|共5页
  • 作者

    Kentaroh Watanabe; Yunpeng Wang; Hassanet Sodabanlu; Masakazu Sugiyama; Yoshiaki Nakano;

  • 作者单位

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;

    Department of Electrocal Engineering & Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 133-8656, Japan;

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan,Department of Electrocal Engineering & Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 133-8656, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Superlattices; A2. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting Ⅲ-Ⅴ materials; B3. Solar cells;

    机译：A1。超晶格A2。金属有机气相外延;A3。量子阱;B2。半导体Ⅲ-Ⅴ材料;B3。太阳能电池;

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