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首页> 外文期刊>Journal of Crystal Growth >Development of GaN wafers via the ammonothermal method
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Development of GaN wafers via the ammonothermal method

机译：通过氨热法开发GaN晶片

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This paper reviews the current progress of ammonothermal growth at SixPoint Materials and discusses some of the remaining challenges to commercialize the technology. The mass production of the ammonothermal grown wafers of GaN for high power devices has substantial commercial potential but is currently limited by two problems: impurities which lead to semitransparent coloration and stress in the crystals which leads to cracking. To improve the coloration, it is important to understand and reduce the impurities in the crystal. Oxygen impurities were found to be the primary source of coloration. By reducing the oxygen impurities the absorption coefficient at 450 nm was improved to 3.9 cm~(-1) yielding semitransparent crystals. The second and more serious issue is a cracking that occurs when thick boules are produced. Currently we routinely produce ammonothermal growth over a millimeter in thickness without any cracking. However, as the thickness increases cracks develop. From a production viewpoint, the production of thick crystals is beneficial since it allows a single wafer to be processed into many. By improving a variety of parameters, the crack density was reduced and the maximum crack-free growth increased from 1 mm to 2.6 mm.
机译：本文回顾了SixPoint Materials的氨热增长的最新进展，并讨论了将该技术商业化所面临的一些挑战。用于高功率器件的氨热生长的GaN晶片的批量生产具有巨大的商业潜力，但目前受到两个问题的限制：导致半透明着色的杂质和导致破裂的晶体应力。为了改善着色，重要的是了解和减少晶体中的杂质。发现氧杂质是着色的主要来源。通过减少氧杂质，将450 nm处的吸收系数提高到3.9 cm〜（-1），得到半透明晶体。第二个也是更严重的问题是，当产生粗大的圆团时会发生开裂。目前，我们通常会产生厚度超过一毫米的氨热生长而不会破裂。但是，随着厚度的增加，会产生裂纹。从生产的角度看，厚晶体的生产是有利的，因为它允许将单个晶片加工成许多晶片。通过改善各种参数，降低了裂纹密度，最大无裂纹扩展从1 mm增加到2.6 mm。

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