GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures

著录项

• 来源
  《Journal of Crystal Growth》 |2013年第1期|101-104|共4页
• 作者

  R.A.R. Leute; D. Heinz; J. Wang; F. Lipski; T. Meisch; K. Thonke; J. Thalmair; J. Zweck; F. Scholz;

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• 作者单位

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

  Institute of Quantum Matter/Semiconductor Physics Croup, Ulm University, 89069 Ulm, Germany;

  Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany;

  Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany;

  Institute of Optoelectronics, Ulm University, 89069 l/Im, Germany;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. selective epitaxy; A3. semipolar quantum wells; B1. nitrides; B3. light emitting diodes;

  机译：A3。选择性外延A3。半极性量子阱;B1。氮化物B3。发光二极管;