• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
【24h】

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

机译：金属有机气相外延氮化对InN极性和生长的作用

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on metal-organic vapor phase epitaxy (MOVPE) of (0001 )InN layers simultaneously grown on α-plane (1120) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500 ℃ to 1050 ℃ prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800 ℃ lead to N-polar InN layers, while nitridation temperatures from 700 ℃ to 750 ℃ produce mixed-polar InN layers, and nitridation temperatures from 500 ℃ to 650 ℃ produce In-polar InN layers. The roughness and crystallinity of the InN layers are correlated with the changes of polarity. The incorporation of nitrogen into the nitridation layers at different nitridation temperatures was measured. A strong N-Al bond signal after nitridation is correlated with N-polarity layers after overgrowth.
机译：我们报告了同时在α平面（1120）和c平面（0001）蓝宝石衬底上生长的（0001）InN层的金属有机气相外延（MOVPE）。在生长c平面InN层之前，先在500℃至1050℃的温度下对衬底进行氮化。氮化确定了InN层的极性，结晶度和表面形态。高于800℃的氮化温度会形成N极InN层，而从700℃到750℃的氮化温度会生成混合极性的InN层，而从500℃到650℃的氮化温度会产生N极性的InN层。 InN层的粗糙度和结晶度与极性的变化相关。测量了在不同的氮化温度下氮向氮化层中的掺入。氮化后的强N-Al键信号与过度生长后的N极性层相关。

著录项

  • 来源
    《Journal of Crystal Growth》 |2013年第1期|17-22|共6页
  • 作者

    Due V. Dinh; D. Skuridina; S. Solopow; M. Pristovsek; P. Vogt; M. Kneissl;

  • 作者单位

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

    Institute of Solid State Physics, Technische Universitat Berlin, HardenbergstraBe 36, 10623 Berlin, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A2. Growth from vapor; A2. Single crystal growth; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire;

    机译：A2。蒸气生长;A2。单晶生长;A3。金属有机气相外延;B1。氮化物;B1。蓝宝石;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号