Elimination of rotation domains in ZnO thin films on c-plane Al_2O_3 substrates

Tina Trautnitz; Ralf Sorgenfrei; Michael Fiederle

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Elimination of rotation domains in ZnO thin films on c-plane Al_2O_3 substrates

机译：消除c平面Al_2O_3衬底上ZnO薄膜中的旋转域。

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Epitaxial zinc oxide layers were grown by plasma-enhanced molecular beam epitaxy (P-MBE) on Al_2O_3 substrates. The zinc oxide films grown on c-plane (00.1) Al_2O_3 showed the formation of well-known 30° rotation domains. By variation of the growth parameters, basically the II/VI ratio, the formation of rotation domains was successful suppressed and the expected relationships between substrate and film shaped. The influence of other growth parameters, such as growth temperature and film thickness, on the formation of rotation domains was found to be insignificant.

机译：通过等离子增强分子束外延（P-MBE）在Al_2O_3衬底上生长外延氧化锌层。在c平面（00.1）Al_2O_3上生长的氧化锌膜显示出众所周知的30°旋转畴。通过改变生长参数（基本上是II / VI比），成功地抑制了旋转域的形成，并预期了基底与薄膜之间的预期关系。发现其他生长参数（例如生长温度和膜厚）对旋转域的形成的影响微不足道。

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来源
《Journal of Crystal Growth》 |2010年第4期|624-627|共4页
作者
Tina Trautnitz; Ralf Sorgenfrei; Michael Fiederle;
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作者单位

Freiburger Materialforschungszentrum der Albert-Ludwigs-Universitaet, Stefan-Meier-Str. 27, 79104 Freiburg i.Br., Germany;

rnFreiburger Materialforschungszentrum der Albert-Ludwigs-Universitaet, Stefan-Meier-Str. 27, 79104 Freiburg i.Br., Germany;

rnFreiburger Materialforschungszentrum der Albert-Ludwigs-Universitaet, Stefan-Meier-Str. 27, 79104 Freiburg i.Br., Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Rotation domains; A1. Characterization; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Zinc oxide;

机译：A1。旋转域;A1。表征;A1。 X射线衍射;A3。分子束外延;B1。氧化锌;

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1. Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates [J] . Yuk JM, No YS, Kim TW, Journal of the Korean Physical Society . 2009,第1期

机译：n-Si衬底上生长的ZnO薄膜在30度旋转域中不对称倾斜晶界的原子排列。
2. Epitaxial growth of (111)-oriented Zr_xTi_(1-x)N thin films on c-plane Al_2O_3 substrates [J] . Ruiteng Li, Jateen S. Gandhi, Rajeev Pillai, Journal of Crystal Growth . 2014,第octa15期

机译：在c平面Al_2O_3衬底上外延生长（111）取向Zr_xTi_（1-x）N薄膜
3. Atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing [J] . J.W. Shin, J.Y. Lee, Y.S. No, Journal of Materials Research . 2009,第6期

机译：由于热退火，在硅衬底上生长的ZnO薄膜中30°面内旋转畴边界的原子排列变化
4. Atomic layer epitaxy of ZnO and TiO_2 thin films on c-plane sapphire substrate for novel oxide soft x-ray mirrors [C] . Masaki Murata, Yuji Tanaka, Hiroshi Kumagai, Oxide-based materials and devices . 2010

机译：用于新型氧化物软X射线镜的c面蓝宝石衬底上ZnO和TiO_2薄膜的原子层外延
5. Interface structure studies of copper thin films on C-plane sapphire by crystal truncation rod analysis using synchrotron x-ray. [D] . Chung, Ki-Sup. 1998

机译：使用同步加速器X射线通过晶体截断杆分析研究C面蓝宝石上的铜薄膜的界面结构。
6. Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures [O] . Fang-Hsing Wang, Cheng-Fu Yang, Yen-Hsien Lee 2014

机译：ZnF2掺杂的ZnO靶在不同溅射衬底温度下沉积F掺杂的ZnO透明薄膜
7. Temperature-dependent solid-state reactions with and without Kirkendall effect in $Al_2O_3$/ZnO, $Fe_2O_3$/ZnO, and $Co_xO_y/ZnO$ oxide thin film systems [O] . Zolotaryov, A., Goetze, S., Zierold, R., 2010

机译：在$ Al_2O_3 $ / ZnO，$ Fe_2O_3 $ / ZnO和$ Co_xO_y / ZnO $氧化物薄膜系统中具有和不具有Kirkendall效应的温度依赖性固态反应

Elimination of rotation domains in ZnO thin films on c-plane Al_2O_3 substrates

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