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首页> 外文期刊>Journal of Crystal Growth >Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

机译：BInGaN四元合金的金属有机气相外延和硼含量的表征

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摘要

BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.
机译：通过金属有机气相外延（MOVPE）在GaN /蓝宝石模板衬底上生长了硼含量最高为2％，铟含量最高为14％的BInGaN四元合金。外延层组成通过二次离子质谱法（SIMS）确定，并通过X射线光电子能谱法（XPS）确认。带隙能量使用光学透射和反射光谱法测量。我们发现，BInGaN中掺入硼会降低带隙，从而产生类似于InGaN中铟含量增加的效应。然而，添加硼具有减少与常规GaN衬底的晶格失配的优点。

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  • 来源
    《Journal of Crystal Growth》 |2010年第5期|641-644|共4页
  • 作者

    S. Gautier; G. Orsal; T. Moudakir; N. Maloufi; F. Jomard; M. Alnot; Z. Djebbour; A.A. Sirenko; M. Abid; K. Pantzas; I.T. Ferguson; P.L. Voss; A. Ougazzaden;

  • 作者单位

    Laboratoire Materiaux Optiques, Photonique et Systeme (LMOPS), UMR CNRS 7132, University of Metz and Supelec, 2 rue E. Belin, F-57070 Metz, France;

    Laboratoire Materiaux Optiques, Photonique et Systeme (LMOPS), UMR CNRS 7132, University of Metz and Supelec, 2 rue E. Belin, F-57070 Metz, France;

    UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France;

    Laboratoire d'Etude des Textures et Application aux Materiaux, FRE CNRS 3143, University of Metz, ISGMP, He du Saulcy, F-57012 Metz, France;

    Laboratoire de Physique des Solides et de Cristallogenese (LPSC), UMR 8635 CNRS, University of Versailles-Saint-Quentinl, place Aristide Briand, 92195 Meudon Cedex, France;

    Laboratoire de Physique des Materiaux, UMR CNRS 7556, Universite Henri Poincare, Bd des aiguillettes B.P. 239, F-54506 Vandoeuvre les Nancy, France;

    Laboratoire de Genie Electrique de Paris, UMR 8507 CNRS, SUPELEC, University Paris-Sud 11, University Pierre et Marie Curie, 11 ruejoliot Curie, 91192 Gif-sur-Yvette, France Department of Physics and Engineering Science, University of Versailles UVSQ, 45 Av. Des Etats Unis, 78035 Versailles, France;

    Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102, USA;

    Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France;

    Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France;

    School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332, USA;

    Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France;

    Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Metal-organic vapour phase epitaxy; B1. BInGaN; B1. Boron; B1. InGaN;

    机译：A3。金属有机气相外延;B1。 BInGaN;B1。硼;B1。氮化铟镓;

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