Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第5期|724-729|共6页
• 作者

  S. Adhikary; N. Haider; S. Chakrabart; S. Majumdar; S.K. Ray; M. Herrera; M. Bonds; N.D. Browning;

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• 作者单位

  Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India;

  Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India;

  Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India;

  Department of Physics and Meteorology Indian Institute of Technology Kharagpur, Kharagpur 721302, India;

  Department of Physics and Meteorology Indian Institute of Technology Kharagpur, Kharagpur 721302, India;

  Department of Chemical Engineering and Materials Science University of California-Davis, 1153 Kemper Hall, One Shields Avenue, Davis, CA 956)6, USA;

  Department of Chemical Engineering and Materials Science University of California-Davis, 1153 Kemper Hall, One Shields Avenue, Davis, CA 956)6, USA;

  Department of Chemical Engineering and Materials Science University of California-Davis, 1153 Kemper Hall, One Shields Avenue, Davis, CA 956)6, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Nanostructure; A3.Molecular beam epitaxy; A3.Quantum dots; B2.Semiconducting III-V materials;

  机译：A1。纳米结构A3。分子束外延;A3。量子点B2。III-V半导体材料;