Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Brent C. Houchens; Piotr Becla; Stephanie E. Tritchler; Andres J. Goza; David F. Bliss

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Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

机译：体三元半导体的晶体生长：水平布里奇曼法和水平行进加热器法GaInSb生长的比较

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Results from the growth of bulk Ga_(1-x)In_xSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.

机译：给出了块状Ga_（1-x）In_xSb晶体生长的结果。三元晶体生长的主要挑战是控制组成和电阻率，同时还降低缺陷的浓度。描述了一种改进的水平行进加热器方法（HTHM）的生长过程，可以实现这些目标。该方法使用过量的铟作为溶剂，使三元晶体在给定的组成下（低于所需合金的液相线温度）生长。较低的温度增长降低了诸如镓空位之类的天然缺陷的密度。水平行进加热器方法对合金成分产生区域均化效果，从而获得均匀的成分晶体。将通过HTHM获得的溶质分布与通过水平Bridgman方法生长的晶体进行比较。

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来源
《Journal of Crystal Growth》 |2010年第8期|p.1090-1094|共5页
作者
Brent C. Houchens; Piotr Becla; Stephanie E. Tritchler; Andres J. Goza; David F. Bliss;
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作者单位

Rice University, Houston, TX, USA;

rnSolid State Scientific Corp., Nashua, NH, USA;

rnRice University, Houston, TX, USA;

rnRice University, Houston, TX, USA;

rnAir Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Segregation; A2. Growth from melt; B1. Antimonides; B2. Semiconducting ternary compounds;

机译：A1。隔离;A2。从熔体中生长;B1。锑化物;B2。半导体三元化合物;

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1. Crystal growth of NdBa_2Cu_O_(7-γ) and Ba_2Cu_3O_(5+δ) single crystals by a horizontal Bridgman like method [J] . Susumu Shibata, Hiromi Unoki, Kiyoshi Kuroda, Journal of Materials Science Letters . 1997,第15期

机译：NdBa_2Cu_O_（7-γ）和Ba_2Cu_3O_（5 +δ）单晶的水平布里奇曼法生长
2. Growth of Bi-2212 single crystals by a horizontal Bridgman method using different oxygen pressure [J] . Fujiwara M, Makino T, Nakabayashi T, Physica, C. Superconductivity and its applications . 2009,第15a20期

机译：使用不同的氧气压力通过水平Bridgman方法生长Bi-2212单晶
3. Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditions [J] . B. Lent, S. Dost, R. F. Redden Journal of Crystal Growth . 2002,第期

机译：抑制重力条件下三元半导体材料行进加热器生长的数学模拟
4. A numerical simulation model for the growth of GaInSb single crystals by the travelling heater method [C] . S. Dost, R. A. Meric, B. Lent, Canadian Congress of Applied Mechanics . 2001

机译：行进加热器法的增长单晶生长的数值模拟模型
5. Understanding Growth Rate Limitations in Production of Single-Crystal Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM) [D] . Peterson, Jeffrey H. 2017

机译：通过行进加热法（THM）了解单晶碲化镉锌（CZT）生产中的生长速率限制
6. Direct comparison of time-resolved Terahertz spectroscopy and Hall Van der Pauw methods for measurement of carrier conductivity and mobility in bulk semiconductors [O] . Brian G. Alberding, W. Robert Thurber, Edwin J. Heilweil -1

机译：时间分辨太赫兹光谱法和Hall Van der Pauw方法的直接比较用于测量体半导体中的载流子电导率和迁移率
7. Horizontal travelling heater method growth of Hg1−xCdxTe with crucible rotation [O] . Gille Peter, Presia M., Bloedner R. U., 1993

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Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

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