Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第15期|P.2239-2242|共4页
• 作者

  Tzu-Tao Yuan; rnPing-Yu Kuei; rnLi-Zen Hsieh; rnTa-Ching Li; rnWen-Jen Lin;

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• 作者单位

  Department of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, ROC;

  rnDepartment of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, ROC;

  rnDepartment of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, ROC;

  rnMaterials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan, ROC;

  rnMaterials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan, ROC;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Background electron concentration; A1. Carrier gas; A3. MOCVD; B2. GaN;

  机译：A1。背景电子浓度;A1。载气A3。 MOCVD;B2。氮化镓;