...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition
【24h】

Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

机译：金属有机化学气相沉积法在GaN模板上生长富Al InxAl1-xN三元合金的生长和性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An Al-rich InxAl1-xN ternary alloy was grown on a GaN template by metal-organic chemical vapour deposition (MOCVD). The GaN template was fabricated on a c-plane sapphire with a low temperature GaN nucleation layer. The growth of the 300 nm thick InxAl1-xN layer was carried out under various growth temperatures and pressures. The surface morphology and the InN molar fraction of the InxAl1-xN layer were assessed by using atomic force microscopy (AFM) and high resolution x-ray diffraction, respectively. The AFM surface images of the InxAl1-xN ternary alloy exhibited quantum dot-like grains caused by the 3D island growth mode. The grains, however, disappeared rapidly by increasing diffusion length and mobility of the Al adatoms with increasing growth temperature and the full width at half maximum value of ternary peaks in HR-XRD decreased with decreasing growth pressure. The MOCVD growth condition with the increased growth temperature and decreased growth pressure would be effective to grow the InxAl1-xN ternary alloy with a smooth surface and improved quality. The optical band edge of InxAl1-xN ternary alloys was estimated by optical absorbance and, based on the results of HR-XRD and optical absorbance measurements, we obtained the bowing parameter of the InxAl1-x N ternary alloy at b = 5.3 eV, which was slightly larger than that of previous reports.
机译：通过金属有机化学气相沉积（MOCVD）在GaN模板上生长富含Al的InxAl1-xN三元合金。 GaN模板是在具有低温GaN成核层的c面蓝宝石上制造的。在各种生长温度和压力下进行300 nm厚的InxAl1-xN层的生长。 InxAl1-xN层的表面形貌和InN摩尔分数分别通过原子力显微镜（AFM）和高分辨率X射线衍射评估。 InxAl1-xN三元合金的AFM表面图像显示出由3D岛生长模式引起的量子点状晶粒。然而，随着生长温度的升高，Al原子的扩散长度和迁移率增加，晶粒迅速消失，HR-XRD中三元峰的半峰全宽随着生长压力的降低而降低。随着生长温度的升高和生长压力的降低，MOCVD生长条件将有效地生长具有光滑表面和改善质量的InxAl1-xN三元合金。通过吸光度估算InxAl1-xN三元合金的光学带边，并根据HR-XRD和吸光度测量的结果，得出InxAl1-xN三元合金在b = 5.3 eV时的弯曲参数。比以前的报告稍大。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号