Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station

A.G. Ostrogorsky; C. Marin; A. Churilov; M.P. Volz; W.A. Bonner; T. Duffar

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Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station

机译：在国际空间站的微重力科学手套箱中可重现的Te掺杂的InSb实验

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Four Te-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS). Three Te-doped InSb crystals were grown at R = 5mm/h. One crystal was grown at R = 3.33 mm/h. The distribution of Te was measured using secondary ion mass spectroscopy (SIMS). The initial transients in Te concentration were found to be consistent, yielding a diffusivity of Te in InSb melts of D = 1 × 10~(-5) cm~2/s. One experiment revealed a diffusion controlled final transient. In all experiments, the charge was pressurized by a piston and spring device, to prevent de-wetting.

机译：在国际空间站（ISS）的微重力条件下，将四个Te掺杂的InSb晶体定向凝固。在R = 5mm / h下生长了三个掺Te的InSb晶体。一个晶体以R ＝ 3.33mm / h生长。 Te的分布使用二次离子质谱法（SIMS）测量。发现Te浓度的初始瞬变是一致的，从而使Te在InSb熔体中的扩散系数为D = 1×10〜（-5）cm〜2 / s。一个实验揭示了扩散控制的最终瞬态。在所有实验中，装料都通过活塞和弹簧装置加压，以防止脱湿。

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来源
《Journal of Crystal Growth》 |2008年第2期|p.364-371|共8页
作者
A.G. Ostrogorsky; C. Marin; A. Churilov; M.P. Volz; W.A. Bonner; T. Duffar;
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作者单位

Rensselaer Polytechnic Institute, Troy, NY, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Diffusion; A1. Directional solidification; A1. Segregation; A2. Microgravity conditions; B1. InSb; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。扩散;A1。定向凝固;A1。隔离;A2。微重力条件;B1。 InSb;B2。半导体Ⅲ-Ⅴ材料;

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Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station

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