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首页> 外文期刊>Journal of Crystal Growth >Epitaxial growth of cubic A1N films on SrTiO_3(100) substrates by pulsed laser deposition
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Epitaxial growth of cubic A1N films on SrTiO_3(100) substrates by pulsed laser deposition

机译：通过脉冲激光沉积在SrTiO_3（100）衬底上外延生长立方AlN薄膜

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摘要

Cubic AlN thin films have been fabricated on SrTiO_3(100) substrates by pulsed laser deposition (PLD) at different substrate temperatures and ambient nitrogen pressures. The microstructure and surface morphology of the deposited films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectrometry (XPS). AlN films fabricated at 450 ℃ had polycrystalline structures. Epitaxial cubic AlN films were obtained when the deposition temperature was increased to 650 ℃. The epitaxial relationship of cubic AlN film on SrTiO_3 substrate was AlN[100]‖SrTiO_3[100] and AlN(200)‖SrTiO_3(100). The degradation of the film crystalline quality was found if the growth temperature was further increased to 800 ℃. AFM investigation revealed that the surface morphology of AlN films strongly depended on N_2 partial pressure. The root mean square (RMS) roughness values for AlN films deposited at 650 ℃ and at 10 Pa N_2 were about 0.674 nm. In addition, XPS results demonstrated that no oxide phase existed in epitaxial AlN films. Thus, epitaxial cubic AlN films could be fabricated on STO substrates under the optional deposition conditions by PLD.
机译：在不同的基板温度和环境氮气压力下，通过脉冲激光沉积（PLD）在SrTiO_3（100）基板上制备了立方AlN薄膜。通过反射高能电子衍射（RHEED），X射线衍射（XRD），原子力显微镜（AFM）和X射线光电子能谱（XPS）表征了沉积膜的微观结构和表面形态。在450℃下制备的AlN薄膜具有多晶结构。当沉积温度提高到650℃时，得到了外延立方AlN薄膜。 SrTiO_3基体上立方AlN薄膜的外延关系为AlN [100]‖SrTiO_3[100]和AlN（200）‖SrTiO_3（100）。如果将生长温度进一步提高到800℃，则会发现薄膜的结晶质量下降。原子力显微镜研究表明，AlN薄膜的表面形态强烈依赖于N_2分压。在650℃和10 Pa N_2下沉积的AlN薄膜的均方根（RMS）粗糙度值约为0.674 nm。另外，XPS结果表明在外延AlN膜中不存在氧化物相。因此，可以在可选的沉积条件下通过PLD在STO衬底上制造外延立方AlN膜。

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