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首页> 外文期刊>Journal of Crystal Growth >High Optical Quality Zno Epilayers Grown On Sapphire Substrates By Reactive Magnetron Sputtering Of Zinc Target
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High Optical Quality Zno Epilayers Grown On Sapphire Substrates By Reactive Magnetron Sputtering Of Zinc Target

机译：通过反应磁控溅射锌靶在蓝宝石衬底上生长高光学质量的Zno外延层

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摘要

Zinc oxide (ZnO) epilayers were grown on (0001) sapphire substrates by reactive sputtering of a zinc target at substrate temperatures of 300 and 600℃. High-resolution X-ray diffraction, UV-visible and photoluminescence (PL) measurements were carried out to obtain information about epitaxy, micro-structure and optically active defects in these epilayers. Though the epilayer deposited at 600℃ showed a slightly smaller crystallite size along the growth direction as compared to that deposited at 300℃, it was much superior in terms of other micro-structural parameters. It exhibited significantly small values of micro-strain (2 ×10~(-4)), rocking curve width (～0.13°), mosaic twist (0.35°), and screw (6.6×10~8cm~(-2))- and edge (2.9×10~(11) cm~(-2))-type dislocation densities. Absorption and PL studies showed the high optical quality of the ZnO epilayer deposited at 600℃, which exhibited a narrow (full-width at half-maximum-FWHM～96 meV) and intense band edge luminescence at room temperature. The micro-structural parameters and the sharp PL peak show that the reactively sputtered ZnO epilayer grown at 600℃ is comparable in epitaxial and optical quality with ZnO grown by other epitaxial processes.
机译：通过在300和600℃的衬底温度下反应性溅射锌靶，在（0001）蓝宝石衬底上生长氧化锌（ZnO）外延层。进行了高分辨率X射线衍射，UV可见光和光致发光（PL）测量，以获得有关这些外延层中的外延，微结构和光学活性缺陷的信息。尽管在600℃下沉积的外延层在生长方向上比在300℃下沉积的外延层具有略小的晶粒尺寸，但在其他微观结构参数方面却要好得多。它的微应变（2×10〜（-4）），摇摆曲线宽度（〜0.13°），镶嵌扭曲（0.35°）和螺丝（6.6×10〜8cm〜（-2））的值都非常小。 -和边缘（2.9×10〜（11）cm〜（-2））型位错密度。吸收和PL研究表明，在600℃下沉积的ZnO外延层具有较高的光学质量，在室温下具有窄的（半峰全宽-FWHM〜96 meV时的全宽）和强的带边发光。微观结构参数和清晰的PL峰表明，在600℃下生长的反应溅射ZnO外延层在外延和光学质量上可与其他外延工艺生长的ZnO相媲美。

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