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首页> 外文期刊>Journal of Crystal Growth >Thin Mno And Nio Films Grown Using Atomic Layer Deposition From Ethylcyclopentadienyl Type Of Precursors
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Thin Mno And Nio Films Grown Using Atomic Layer Deposition From Ethylcyclopentadienyl Type Of Precursors

机译：乙基环戊二烯基类型前体的原子层沉积生长的Mno和Nio薄膜

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We report on the atomic layer deposition (ALD) of MnO and NiO thin films on Si(100) using Mn(EtCp)_2 [EtCp = ethylcyclopentadienyl, (C_2H_5)C_5H_4] and Ni(EtCp)_2 in the temperature range of 150-300 ℃. H_2O or O_3 is selected as oxygen source for the depositions. The growth temperature (T_g) and oxygen source impact on the structure, electronic density, and impurity concentration for the as-grown MnO and NiO films have been studied using X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD), and Fourier transform infrared (FTIR) spectroscopy. A steady growth rate of 0.024-0.025 nm/cycle for the films grown using Mn(EtCp)_2 and H_2O was observed in the T_g range of 250-300 ℃. FTIR does not show any carbon impurities in the MnO films grown with H_2O. The films grown using Mn(EtCp)_2 and O_3 at 300 ℃ exhibit poor adhesion on Si(100). NiO films with low amounts of contaminants are achieved using O_3 and at a T_g of 250 ℃ or above. The growth rate, however, is very high for films deposited at T_g = 150 ℃ and decreases significantly in films deposited at higher temperatures. In addition, no film growth was observed for the Ni(EtCp)_2/H_2O process. The as-grown MnO and NiO films prepared using H_2O and O_3 as oxidizer, is shown, by GIXRD a polycrystalline cubic structure.
机译：我们报道了在Mn（EtCp）_2 [EtCp =乙基环戊二烯基，（C_2H_5）C_5H_4]和Ni（EtCp）_2在150- 300℃。选择H_2O或O_3作为沉积的氧源。使用X射线反射率（XRR），掠入射X射线衍射（GIXRD）研究了生长温度（T_g）和氧源对生长的MnO和NiO膜的结构，电子密度和杂质浓度的影响，以及傅立叶变换红外（FTIR）光谱。在250_300℃的T_g范围内，用Mn（EtCp）_2和H_2O生长的薄膜的稳定生长速率为0.024-0.025 nm /个周期。 FTIR在H_2O生长的MnO薄膜中未显示任何碳杂质。 Mn（EtCp）_2和O_3在300℃下生长的薄膜在Si（100）上的附着力较差。使用O_3且在T_g为250℃或更高的温度下可以获得具有少量污染物的NiO膜。然而，对于T_g = 150℃沉积的薄膜，其生长速率非常高，而在较高温度下沉积的薄膜的生长速率则显着降低。此外，Ni（EtCp）_2 / H_2O工艺未观察到任何膜生长。通过GIXRD显示了使用H_2O和O_3作为氧化剂制备的MnO和NiO薄膜。

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