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首页> 外文期刊>Journal of Crystal Growth >Crystal growth of ZnO on Si(1 1 1) by metalorganic vapor phase epitaxy
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Crystal growth of ZnO on Si(1 1 1) by metalorganic vapor phase epitaxy

机译：金属有机气相外延法在Si（1 1 1）上生长ZnO晶体

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This paper reports the novel growth procedure for ZnO films on Si substrates by metalorganic vapor phase epitaxy. This can lead to conductive and inexpensive substrates for ZnO, which have been obstructed by the difficulty of growing ZnO films on Si due to easy oxidation of Si substrate surface with an oxygen source. Our proposal is based on the following three step growth, that is, (ⅰ) the growth of initial nucleation layer, (ⅱ) the successive growth of recovery layer, and (ⅲ) the growth of main layer. As a result, the three step growth is found to be a promising procedure to grow ZnO films on Si substrates with smooth surface. The increase of Ⅵ/Ⅱ ratio for the main layer growth is also effective for further improvement of the surface morphology.
机译：本文报道了通过有机金属气相外延在Si衬底上生长ZnO薄膜的新方法。这可能会导致导电且价格便宜的ZnO基板，由于难于用氧气源氧化Si基板表面，因此难以在Si上生长ZnO膜而造成阻碍。我们的建议基于以下三个步骤的增长，即（ⅰ）初始成核层的增长，（ⅱ）恢复层的连续增长和（ⅲ）主层的增长。结果，发现三步生长是在具有光滑表面的Si衬底上生长ZnO膜的有前途的方法。增加主层生长的Ⅵ/Ⅱ比值对于进一步改善表面形貌也是有效的。

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